Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Impedance matching method and semiconductor process equipment

A technology of process equipment and impedance matching, which is applied in the direction of discharge tubes, electrical components, circuits, etc., can solve problems such as inconsistent matching time, different initial state matching process, and influence on the stability of process results, so as to reduce matching time and reduce extinction probability, the effect of small changes in chamber impedance

Pending Publication Date: 2021-07-02
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the time required for the matcher to perform impedance matching in the Auto preset mode depends on the matcher algorithm and the selection of the preset position, and the difference in the initial capacitance value of each variable capacitor and the initial state of the plasma will also lead to a different matching process, and lead to inconsistent matching times
Due to the limitation of the algorithm, when the initial capacitance value position of the variable capacitor is poor, the matching time sometimes reaches 4-5s, which has a great impact on the stability of the process result.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Impedance matching method and semiconductor process equipment
  • Impedance matching method and semiconductor process equipment

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment

[0064] In the stage of determining the capacitance value (the first ignition), the control mode of the matcher is set to Auto preset mode, so that the matcher is in the state of automatic matching. Adjust the capacitance values ​​of the first capacitor C1 , the second capacitor C2 and the third capacitor C3 to a preset position where any matcher can normally match. The RF power supply loads power, and the matcher automatically matches. The capacitance values ​​a1, a2, and a3 of C1, C2, and C3 after the matcher is completely matched are recorded and saved as stable capacitance values ​​corresponding to C1, C2, and C3, respectively.

[0065] When starting for the second time, make the matching device in a non-automatic matching state, and set the capacitance values ​​of C1, C2, and C3 to b1, a2, and a3 respectively, where b1 is the starting capacitance value of the first capacitor C1. The RF power supply is loaded with power, and after the power is loaded in the reaction chambe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an impedance matching method of semiconductor process equipment, which comprises the following steps: a capacitance value determination stage: detecting stable capacitance values of a plurality of capacitors in a matcher after build-up of luminance occurs in a process chamber and the matcher completes automatic matching; a matching stage: the capacitance value of one capacitor in the matcher is adjusted to be the corresponding luminance build-up capacitance value, the capacitance values of the other multiple capacitors are adjusted to be the corresponding stable capacitance values, and the luminance build-up capacitance value of the capacitor is smaller than the stable capacitance value of the capacitor; and the power supply is started, and the capacitance value of a capacitor from the build-up capacitance value is adjusted to the stable capacitance value of the capacitor. According to the impedance matching method provided by the invention, rapid and stable build-up of luminance can be realized, the matching time of the matcher is shortened, and the consistency of process results is improved. The invention also provides semiconductor process equipment.

Description

technical field [0001] The present invention relates to the field of semiconductor technology, in particular to an impedance matching method for semiconductor technology equipment and semiconductor technology equipment. Background technique [0002] The inductively coupled plasma source is used in etching, thin film deposition, ion implantation and doping in the field of semiconductor equipment manufacturing. Ion bombardment energy. A typical RF discharge plasma generation system usually includes a RF power supply with a frequency of 13.56MHz and an output impedance of 50Ω, and a plasma reaction chamber with an inductively coupled coil and an electrostatic chuck inside. The transmission line theory points out that when the characteristic impedance of the power supply is different from the load impedance, the output power of the RF power supply will be lost, and the output efficiency cannot be maximized, resulting in energy waste, which may cause damage to the power supply i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32
CPCH01J37/32183
Inventor 李文庆
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products