Semiconductor device
A semiconductor and device technology, applied in the field of high electron mobility transistors, which can solve problems such as changing device characteristics and circuit failures
Active Publication Date: 2021-07-02
INNOSCIENCE (SUZHOU) SEMICON CO LTD
View PDF12 Cites 1 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
The presence of such carriers in the device triggers a number of physical damage phenomena that can drastically alter the characteristics of the device and eventually cause the circuit containing the device to fail
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0016] Throughout the drawings and detailed description, the same reference symbols will be used to designate the same or like parts. Embodiments of the present disclosure can be easily understood from the following detailed description in conjunction with the accompanying drawings.
[0017] In spatial descriptions, such as "above", "below", "above", "left", "right", "below", "top", "bottom", "portrait", "landscape", " The terms "one side", "higher", "lower", "upper", "above", "under", etc. refer to a certain component or a certain plane of a group of components defined, the orientation of the components may be as shown in their corresponding figures. It should be understood that the spatial descriptions used herein are for illustrative purposes only and that practical manifestations of the structures described herein may be arranged in any orientation or manner in space provided that embodiments of the present disclosure The advantages of are not deviated from such an arran...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| length | aaaaa | aaaaa |
Login to View More
Abstract
A semiconductor device includes a nitride semiconductor layer, a source electrode, a drain electrode, a grid electrode, first and second p-type doped nitride semiconductor layers, and a drain field plate. The source electrode, the drain electrode and the grid electrode are arranged on the nitride semiconductor layer. And the grid electrode is arranged between the source electrode and the drain electrode. The first p-type doped nitride semiconductor layer is arranged on the nitride semiconductor layer and located between the grid electrode and the drain electrode. The first p-type doped nitride semiconductor layer comprises a first p-type doped nitride semiconductor island, a second p-type doped nitride semiconductor island and a third p-type doped nitride semiconductor island which are separated. The second p-type doped nitride semiconductor island is located between the first p-type doped nitride semiconductor island and the third p-type doped nitride semiconductor island. Part of the drain electrode fill gaps among the first p-type doped nitride semiconductor island, the second p-type doped nitride semiconductor island and the third p-type doped nitride semiconductor island. The second p-type doped nitride semiconductor layer is located between the nitride semiconductor layer and the gate. The drain field plate is located right above the first p-type doped nitride semiconductor island, the second p-type doped nitride semiconductor island and the third p-type doped nitride semiconductor island.
Description
[0001] This application is a divisional application of Chinese patent application 202080002210.8 entitled "Semiconductor Device and Method for Manufacturing Semiconductor Device" filed on April 30, 2020. technical field [0002] The present invention generally relates to semiconductor devices. More specifically, the present invention relates to a high electron mobility transistor (HEMT) semiconductor device having a p-type doped III-V compound / nitride semiconductor layer to reduce the hot carrier effect. Background technique [0003] In recent years, research on high electron mobility transistors (HEMTs) has been widely used in semiconductor devices, such as high-power switching devices and high-frequency application devices. HEMTs utilize the junction between two materials with different bandgaps as a channel. For example, an aluminum gallium nitride / gallium nitride (AlGaN / GaN) HEMT is a heterojunction device capable of operating at higher frequencies than conventional tra...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L29/06H01L21/335
CPCH01L29/0611H01L29/0657H01L29/66462H01L29/7787
Inventor 郝荣晖黄敬源
Owner INNOSCIENCE (SUZHOU) SEMICON CO LTD