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Textured silicon nitride ceramic substrate and cutting method and application thereof

A technology of silicon nitride ceramics and texturing, which is applied in the direction of semiconductor devices, circuits, electrical components, etc., can solve the problems of low thermal conductivity of silicon nitride ceramics and limit the application of electronic component substrates, and achieve high thermal conductivity, The effect of good thermal conductivity

Active Publication Date: 2021-07-09
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Traditional silicon nitride ceramics have low thermal conductivity, which limits their application as substrates for electronic components

Method used

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  • Textured silicon nitride ceramic substrate and cutting method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Using textured silicon nitride ceramics, adjusting its texture direction to be perpendicular to the diamond wire and clamping it on the stage of the electroplated diamond wire saw. Adjust the workpiece feed speed of the electroplated diamond wire saw to 0.08mm / min through the console, and set the wire speed to 30m / s. During the cutting process, it is necessary to keep the stage and the instrument flat, without other vibration effects, and set the tension of the diamond wire of the electroplated diamond wire saw to 27N through pneumatic adjustment. During the cutting process, the diamond wire has a certain swing angle, and the swing angle is 7°. In addition, the diamond of the diamond wire had a mesh number of 300 mesh.

[0037] By the method of Example 1, a total of 100 textured silicon nitride ceramic substrates were prepared, and the thermal conductivity (average value) of the prepared silicon nitride ceramic substrates was 102 W m -1 k -1 , surface roughness (aver...

Embodiment 2

[0039] Using textured silicon nitride ceramics, adjusting its texture direction to be perpendicular to the diamond wire and clamping it on the stage of the electroplated diamond wire saw. Adjust the workpiece feed speed of the electroplated diamond wire saw to 0.10mm / min through the console, and set the wire speed to 30m / s. During the cutting process, it is necessary to keep the stage and the instrument flat, without other vibration effects, and set the tension of the diamond wire of the electroplated diamond wire saw to 27N through pneumatic adjustment. During the cutting process, the diamond wire has a certain swing angle, and the swing angle is 8°. In addition, the diamond mesh of the diamond wire was 350 mesh.

[0040] By the method of Example 2, a total of 100 textured silicon nitride ceramic substrates were prepared, and the thermal conductivity (average value) of the prepared silicon nitride ceramic substrates was 102 W·m -1 k -1 , The surface roughness (average) is ...

Embodiment 3

[0042]Using textured silicon nitride ceramics, adjusting its texture direction to be perpendicular to the diamond wire and clamping it on the stage of the electroplated diamond wire saw. Adjust the workpiece feed speed of the electroplated diamond wire saw to 0.12mm / min through the console, and set the wire speed to 35m / s. During the cutting process, it is necessary to keep the stage and the instrument flat, without other vibration effects, and set the tension of the diamond wire of the electroplated diamond wire saw to 30N by means of pneumatic adjustment. During the cutting process, the diamond wire has a certain swing angle, and the swing angle is 9°. In addition, the diamond of the diamond wire had a mesh number of 400 mesh.

[0043] By the method of Example 3, a total of 100 textured silicon nitride ceramic substrates were prepared, and the thermal conductivity (average value) of the prepared silicon nitride ceramic substrates was 102 W·m -1 k -1 , The surface roughnes...

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Abstract

The embodiment of the invention discloses a textured silicon nitride ceramic substrate and a cutting method and application thereof, and relates to the technical field of silicon nitride ceramic substrate preparation. The method is applied to the textured silicon nitride ceramic and comprises the step of cutting the textured silicon nitride ceramic into the textured silicon nitride ceramic substrate in the direction perpendicular to the texturing direction of the textured silicon nitride ceramic through an electroplating diamond fretsaw. In the embodiment of the invention, the textured silicon nitride ceramic is cut into the textured silicon nitride ceramic substrate along the direction vertical to the texturing direction of the textured silicon nitride ceramic through the electroplated diamond fretsaw, so that the thickness direction of the obtained textured silicon nitride ceramic substrate is consistent with the texturing direction of the textured silicon nitride ceramic substrate. The textured silicon nitride ceramic substrate has better thermal conductivity, the thermal conductivity exceeds 100 m <-1 >. K <-1 >, and meanwhile, the surface roughness of the textured silicon nitride ceramic substrate is less than 0.1 micron, so that the requirement of an electronic device substrate on high thermal conductivity can be met.

Description

technical field [0001] The invention relates to the technical field of silicon nitride ceramic substrate preparation, in particular to a textured silicon nitride ceramic substrate and its cutting method and application. Background technique [0002] At present, people have higher and higher requirements on the thermal conductivity of ceramic substrate materials, and ceramic substrates prepared by traditional tape casting methods can only reach 60W·m -1 k -1 . [0003] Compared with non-textured silicon nitride ceramics, textured silicon nitride ceramics have better performance, including strength, hardness, and thermal conductivity. [0004] The low thermal conductivity of traditional silicon nitride ceramics limits its application as a substrate for electronic components. Therefore, how to obtain a silicon nitride ceramic substrate with high thermal conductivity by cutting has become an urgent technical problem in this field. Contents of the invention [0005] The tec...

Claims

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Application Information

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IPC IPC(8): B28D1/06H01L23/15
CPCB28D1/06H01L23/15
Inventor 伍尚华李林伍海东张凤林
Owner GUANGDONG UNIV OF TECH
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