Semiconductor structure and production method thereof

Abstract

The invention relates to a semiconductor structure and a production method thereof. The method comprises the steps: providing a substrate which is provided with an interlayer dielectric layer and a conductive structure located in the interlayer dielectric layer; forming a first isolation dielectric layer on the interlayer dielectric layer and the conductive structure; forming a groove in the first isolation dielectric layer, wherein the groove exposes the upper surface and a part of the side wall of the conductive structure; and filling the groove to form a conductive layer structure, wherein the distance between the bottom side wall of the groove and the exposed side wall of the conductive structure is a first preset value, and the distance between the bottom of the groove and the upper surface of the conductive structure is a second preset value. Therefore, the conductive layer structure can completely fill the groove and is in complete contact with the conductive structure, the contact area of the conductive layer structure and the conductive structure is increased, a contact resistance is reduced, the contact surface between the conductive layer structure and the conductive structure is an inverted plug type structure, and the contact stability between the conductive layer structure and the conductive structure is improved.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular to a semiconductor structure and a preparation method thereof. Background technique [0002] In the preparation process of a typical semiconductor structure, in order to overcome the influence of process deviation on the alignment of the upper and lower contact holes, ensure that the first conductive material in the first contact hole corresponding to the upper conductive structure and the second contact hole corresponding to the lower conductive structure The second conductive material is fully contacted, and the characteristic size of the first contact hole is set to be larger than the characteristic size of the second contact hole. When the first contact hole is formed by etching, the etching stops at the upper surface of the second conductive material and exposes the second contact hole. The upper surface of the conductive material, so that the first conductive ...

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Problems solved by technology

[0003] However, there is a certain deviation in the etching rate between the second conductive material and the interlayer dielectric layer between the second conductive material, and in order to ensure that the upper surface of the second conductive material can be fully exposed, some etching time is generally increased , so that when the second conductive material is exposed by etching, part of the sidewall of the second conductive material will be exposed, and a small groove will be formed between the exposed sidewall and the interlayer dielectric layer, which will cause the subsequent filling of the first conductive material The material is easy to fill incompletely in the groove, forming a void defect, which affects the contact between the first conductive material and the second conductive material, increases the contact resistance between the first conductive material and the second conductive material, and affects the first conductive material. Conductive properties with the second conductive material before

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