Giant magnetoresistance magnetic bipolar switch sensor with adjustable switch field area

A technology of switch sensor and giant magnetoresistance, which is applied in the field of electronic materials and components, can solve the problem of invariable size of the switch field and achieve the effect of improving adaptability

Active Publication Date: 2021-07-09
UNIV OF ELECTRONICS SCI & TECH OF CHINA +1
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Problems solved by technology

[0006] In view of the above existing problems or deficiencies, in order to solve a series of problems of the existing magnetic bipolar switch due to the invariable switching field size after the preparation is completed, the present invention provides a giant magnetoresistive magnetic bipolar switch with adjustable switching field area For the sensor, after the giant magnetoresistance magnetic bipolar switching fil

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  • Giant magnetoresistance magnetic bipolar switch sensor with adjustable switch field area
  • Giant magnetoresistance magnetic bipolar switch sensor with adjustable switch field area
  • Giant magnetoresistance magnetic bipolar switch sensor with adjustable switch field area

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Embodiment Construction

[0040] The technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0041] The preparation method of the giant magnetoresistive magnetic bipolar switch sensor with adjustable switching field area and its regulation and realization process of the present invention comprise the following steps:

[0042] Step 1: A PMN-PT piezoelectric material doped with Mn2+ ions and having an asymmetric residual strain is selected as the substrate material. After the piezoelectric material is applied with a positive voltage pulse, the substrate will produce residual strain that does not need to be maintained by voltage; and when the piezoelectric material is applied with a negative voltage pulse, the strain state of the substrate will return to the initial state, and the original There is residual strain that will be removed, there is no strain. Au (300nm) is deposited on the lower surface of the substrate by...

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Abstract

The invention belongs to the technical field of electronic materials and components, and particularly relates to a giant magnetoresistance magnetic bipolar switch sensor with an adjustable switch field area, which comprises a substrate, an upper electrode, a lower electrode, a sensing unit film and a conductive film. According to the invention, the characteristic that the residual strain of the asymmetric residual strain material can be regulated and controlled through the polarity of the pulse voltage is utilized, and the regulation and control of the switch field in the giant magnetoresistance bipolar switch sensor are realized through the existence of magnetoelastic coupling energy generated by the strain on the ferromagnetic layer 1 of the sensing unit film on the substrate. Due to the fact that the regulation can be adjusted in a switch field in a fixed sensing unit and can be matched with residual strain introduction time to achieve the giant magnetoresistance bipolar switch sensor in an asymmetric switch field mode, the fitness of the products can be improved, application scenes can be expanded, and some special application requirements can be met.

Description

technical field [0001] The invention belongs to the technical field of electronic materials and components, and relates to magnetic sensing technology, specifically a giant magnetoresistance magnetic bipolar switch sensor with adjustable switch field area, which can realize the switch field area by using the magnetoelastic coupling induced by residual strain adjustable. Background technique [0002] The magnetic bipolar switch utilizes two magnetic fields, positive and negative, to achieve switching performance through the output voltage of the magnetic sensor device under the positive and negative magnetic fields. There are many applications in brushless DC motors, speed sensors, pulse counters, proximity switches, and encoders. [0003] In general, the corresponding magnetic field when the magnetic sensor device outputs a low voltage under a positive magnetic field is recorded as Bop (magnetic field operating point, open field), and the corresponding magnetic field when t...

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Application Information

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IPC IPC(8): H03K17/95
CPCH03K17/9505
Inventor 唐晓莉刘梦丽苏桦姜杰
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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