Temperature control method and temperature control system of electrostatic chuck

Abstract

The invention provides a temperature control method and a temperature control system of an electrostatic chuck, the electrostatic chuck is used for bearing a wafer, and the temperature control method of the electrostatic chuck comprises the following steps that the actual bearing temperature of the electrostatic chuck and the actual heating temperature of a heating part used for heating the electrostatic chuck are obtained; according to the preset bearing temperature and the actual bearing temperature of the electrostatic chuck, the target heating temperature needing to be provided by the heating component is calculated; and according to the actual heating temperature and the target heating temperature, the heating power of the heating component is adjusted, so that the actual bearing temperature of the electrostatic chuck is equal to the preset bearing temperature by adjusting the actual heating temperature of the heating component. According to the temperature control method and the temperature control system of the electrostatic chuck, the temperature of the heating component and the temperature of the electrostatic chuck can be controlled more accurately and timely, so that the temperature fluctuation of the electrostatic chuck is reduced, the temperature stability of the electrostatic chuck is improved, and the process stability and the productivity of a semiconductor are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor technology, in particular to a temperature control method and a temperature control system of an electrostatic chuck. Background technique [0002] In the physical vapor deposition (Physical Vapor Deposition, referred to as PVD) process, the wafer to be processed (Wafer) is placed on the electrostatic chuck (ESC), the heater (Heater) provides heat as a heat source, and the electrostatic chuck It is set apart from the heater, and there is a gas between the two, and the gas conducts the temperature of the heater to the electrostatic chuck, so that the temperature of the electrostatic chuck reaches the process temperature. During the process, the heating of the heater needs to be controlled to keep the temperature of the electrostatic chuck stable. [0003] The existing way to control the heating of the heater is to detect the temperature of the part of the inner and outer coils of the heater ...

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Problems solved by technology

[0004] However, the collision between the plasma and the target particles and the wafer during the process will also increase the temperature of the electrostatic chuck, and since the electrostatic chuck and the heater are conducted through gas heat, the detected heater The temperature of the electrostatic chuck has a large hysteresis relative to the temperature of the electrostatic chuck, and the temperature of the electrostatic chuck cannot be fed back in time, causing the temperature of the electrostatic chuck to exceed the process temperature. When the temperature of the electrostatic chuck exceeds the process temperature, it is necessary to wait The temperature of the electrostatic chuck drops below the process temperature, causing a severe impact on throughput

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