Unshielded tri-gate transistor device and resistive full-swing phase inverter based on unshielded tri-gate transistor device

Abstract

The invention discloses an unshielded tri-gate transistor device and a resistive full-swing phase inverter based on the unshielded tri-gate transistor device. The unshielded tri-gate transistor device sequentially comprises a control gate, a control gate insulating layer, a bottom gate, a bottom gate insulating layer, a channel layer, a top gate insulating layer and a top gate from bottom to top, the center lines of the control gate, the control gate insulating layer, the bottom gate, the bottom gate insulating layer, the channel layer, the top gate insulating layer and the top gate coincide, the size of the bottom gate is the same as that of the top gate, the size of the channel layer is larger than the sizes of the bottom gate and the top gate, and the size of the control gate is larger than the size of the bottom gate; and a source electrode and a drain electrode are arranged on the top surface of the channel layer and are respectively positioned on the left side and the right side of the top gate. The resistive full-swing inverter comprises the unshielded tri-gate transistor device and a divider resistor. In the circuit operation process of the transistor device, the top gate is used for regulating and controlling the initial doping of the transistor device, so that the threshold voltage position of the transistor device is accurately controlled, and the full-swing attribute of an inverter circuit is obtained.

Description

technical field [0001] The invention belongs to the application field of integrated circuits, and in particular relates to an unshielded tri-gate transistor device and a resistance-type full-swing inverter based on it. Background technique [0002] Inverters are the most numerous logic gates in digital integrated circuits. In digital circuits, functional units such as operational amplifier circuits require inverters to have full-swing properties to ensure circuit reliability and anti-interference capabilities. Traditional full-swing inverter circuits are usually based on complementary metal-oxide-semiconductor (CMOS), consisting of an enhancement-mode p-type transistor and an enhancement-mode n-type transistor in series, usually regardless of the bias voltage (V DD ) value, the logic threshold voltage of the inverter (V M ) is approximately equal to half of the bias voltage. In traditional transistor devices, p-type transistors and n-type transistors are usually obtained ...

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Problems solved by technology

For a resistive inverter, its V M Depending on the position of the turn-on voltage of the transistor, once the position of the turn-on voltage of the transistor is fixed, the logic threshold voltage of the inverter circuit V M It is also fixed, which will cause the realized inverter circuit to be only able to operate at a certain V of the transistor. DD It is difficult to achieve any transistor V DD full-swing characteristics under

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