The invention discloses an unshielded tri-gate 
transistor device and a resistive full-swing phase 
inverter based on the unshielded tri-gate 
transistor device. The unshielded tri-gate 
transistor device sequentially comprises a control gate, a control gate insulating layer, a 
bottom gate, a 
bottom gate insulating layer, a channel layer, a top gate insulating layer and a top gate from bottom to top, the center lines of the control gate, the control gate insulating layer, the 
bottom gate, the bottom gate insulating layer, the channel layer, the top gate insulating layer and the top gate coincide, the size of the bottom gate is the same as that of the top gate, the size of the channel layer is larger than the sizes of the bottom gate and the top gate, and the size of the control gate is larger than the size of the bottom gate; and a source 
electrode and a drain 
electrode are arranged on the top surface of the channel layer and are respectively positioned on the left side and the right side of the top gate. The resistive full-swing 
inverter comprises the unshielded tri-gate transistor device and a divider 
resistor. In the circuit operation process of the transistor device, the top gate is used for regulating and controlling the initial 
doping of the transistor device, so that the 
threshold voltage position of the transistor device is accurately controlled, and the full-swing attribute of an 
inverter circuit is obtained.