A coaxial alignment device

Abstract

This application relates to a coaxial alignment device. The steps of the monocrystalline silicon production process using the coaxial alignment device include S1: setting up a magnetic field device outside the furnace cylinder of the single crystal furnace, and applying a magnetic field to the inside of the furnace cylinder; S2: charging ;S21: A coaxial alignment device is installed in the furnace barrel, a graphite crucible is installed in the furnace barrel, and a quartz crucible is installed in the graphite crucible through the coaxial alignment device; S22: Polycrystalline is placed in the quartz crucible, and the edges and corners are close to the quartz crucible ;S3: Install and adjust the seed crystal through the coaxial alignment device, the coaxial line between the seed crystal and the quartz crucible; S4: Evacuate and pick up the leak, extract the gas inside the furnace cylinder, and detect the gas leakage rate of the furnace cylinder after the exhaust is completed; S5 : melting material; S6: seeding, shouldering and finishing; S7: shutdown of furnace; S8: taking single crystal. The application has the effects of quickly and accurately adjusting the coaxiality of the graphite crucible, the quartz crucible and the seed crystal, and improving the production efficiency and quality of single crystal silicon.

Description

A coaxial alignment device technical field [0001] The present application relates to the field of single crystal silicon production, in particular to a coaxial alignment device. Background technique Silicon is the most common and widely used semiconductor material, and elemental silicon is melted through a single crystal furnace and arranged in a diamond lattice. Columns form crystal nuclei, which grow into crystal grains with the same crystal plane orientation, forming single crystal silicon. Monocrystalline silicon as a relatively active non-gold It is an elemental crystal and is an important part of crystalline materials. It is at the forefront of the development of new materials. Its main use is as a semiconductor. body materials and the use of solar photovoltaic power generation, heating, etc. [0003] The Chinese patent with publication number CN108823636A discloses a single crystal silicon growth device, which is used for heating A graphite crucible is arrang...

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Problems solved by technology

[0004] In view of the related technologies mentioned above, the inventor believes that when the graphite crucible and the quartz crucible are installed, they need to be in a coaxial state, and the axes of the graphite crucible and the quartz crucible coincide with the rotation axis of the seed crystal. The calibration work during the installation process is cumbersome, and may Low coaxiality affects the production efficiency and production quality of monocrystalline silicon

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