MOSFET trap auxiliary tunneling model and extraction method thereof

Abstract

The invention discloses an MOSFET trap-auxiliary tunneling model. A trap auxiliary tunneling current is a product of a first function and a second function; the first function is a function related to source gate edge side wall trap auxiliary tunneling; the second function is a function related to the drain current; the first function comprises three parameters, and the three parameters are jtsswgs, njtsswgs and vtsswgs respectively; jtsswgs is trap auxiliary saturation current of the side wall of the edge of the source electrode and the grid electrode of the MOSFET; njtsswgs is a non-ideal factor of a trap auxiliary junction of the side wall of the edge of the source electrode and the grid electrode of the MOSFET; vtsswgs is a trap-auxiliary voltage parameter of the side wall of the edge of the source electrode and the grid electrode of the MOSFET; the jtsswgs, the njtsswgs and the vtsswgs respectively have temperature related function terms, the temperature related function terms of the parameters are expanded into constant terms, and the linear term of the temperature until the n-order term of the temperature, the constant terms and coefficients of all the orders are fitting parameters. The invention discloses an extraction method of an MOSFET trap auxiliary tunneling model. According to the invention, fitting of devices at different temperatures can be realized, and the model precision is improved.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a MOSFET trap-assisted tunneling model. The invention also relates to a method for extracting a MOSFET trap-assisted tunneling model. Background technique [0002] With the continuous advancement of semiconductor manufacturing technology, the CMOS process device manufacturing process has been developed to the nanometer level, and the current minimum size has been reduced to 20 nanometers, and the research and development of 10 nanometers has been put on the agenda. With the update of the manufacturing process, the requirements for the model of the device are getting higher and higher. An accurate model is becoming more and more important for high-tech design. At present, in the MOSFET trap-assisted tunneling model, a standardized model is widely used, and only some sacrifices can be made for device fitting under different temperature conditions, whi...

AI Technical Summary

Problems solved by technology

At present, in the MOSFET trap-assisted tunneling model, a standardized model is widely used, and only some sacrifices can be made for device fitting under different temperature conditions, which is not good for designers.

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