High-precision testing device and method for reverse recovery current of non-full-control semiconductor device
A reverse recovery current, non-full control technology, applied in the direction of single semiconductor device testing, measuring devices, instruments, etc., to achieve the effect of high testing accuracy
Active Publication Date: 2021-07-23
STATE GRID LIAONING ECONOMIC TECHN INST +1
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Problems solved by technology
However, for the reverse recovery characteristics of non-fully controlled semiconductor devices such as diodes and thyristors, the traditional LC When the oscillation circuit is tested, in order to meet the actual working conditions, the peak value of the forward current is often much larger than the peak value of the reverse recovery current
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[0020] In order to further illustrate the present invention, the present invention will be described in detail below in conjunction with the accompanying drawings and embodiments, but they should not be construed as limiting the protection scope of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0021] Such as figure 1 , 2 As shown, the non-full control type semiconductor device reverse recovery current high-precision testing system of the present invention includes a capacitor C m , inductance element L m , the non-fully controlled semiconductor device 1 to be tested, the diode 3, the first semiconductor device T1, the second semiconductor device T2 and the high-precision coaxial resistor 2, the capacitor C m and the inductive element L m The LC series branch is formed in series; the em...
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The invention discloses a high-precision testing device and method for reverse recovery current of a non-full-control semiconductor device. The high-precision testing device comprises a capacitor Cm, an inductance element Lm, a tested non-full-control semiconductor device, a diode, a first semiconductor device T1, a second semiconductor device T2 and a high-precision coaxial resistor. The capacitor Cm and the inductance element Lm are connected in series to form an LC series branch; the tested non-full-control type semiconductor device and the diode form a tested non-full-control type semiconductor device branch; the first semiconductor device T1 and the high-precision coaxial resistor are connected in series to form a reverse current test branch, the second semiconductor device T2 forms a forward conduction branch, and the device adopts a double-branch structure, so that the requirement of device test on a forward current peak value is met, and accurate test on reverse recovery current can be realized.
Description
technical field [0001] The invention relates to high-precision current testing equipment, in particular to a high-precision testing device and method for reverse recovery current of non-fully controlled semiconductor devices. Background technique [0002] Semiconductor devices are an important part of today's new energy power systems. Key electrical equipment such as converter valves, reactive power compensation devices, and DC circuit breakers are composed of a large number of semiconductor devices. The transient switching of semiconductor devices will bring a series of electromagnetic interference such as voltage overshoot and oscillation, as well as significant energy loss, which will affect the performance of the equipment. Therefore, it is very necessary to study the transient breaking characteristics of semiconductor devices, especially the reverse recovery characteristics of the device's turn-off process. However, for the reverse recovery characteristics of non-fully...
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Login to View More IPC IPC(8): G01R31/26
CPCG01R31/2601
Inventor 窦文雷佟永吉朱洪波宋卓然姜涛高靖杨博
Owner STATE GRID LIAONING ECONOMIC TECHN INST