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Integrated circuit structure and memory

A technology of integrated circuits and circuit areas, applied in static memory, instruments, etc., can solve the problems of large tDQS2DQ value, temperature and voltage interference, etc.

Pending Publication Date: 2021-07-30
CHANGXIN MEMORY TECH (SHANGHAI) INC
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present disclosure is to provide an integrated circuit structure and memory, and then at least to a certain extent overcome the problems of large tDQS2DQ values ​​and susceptibility to temperature and voltage interference on the transmission path caused by the limitations and defects of related technologies

Method used

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  • Integrated circuit structure and memory
  • Integrated circuit structure and memory
  • Integrated circuit structure and memory

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Embodiment Construction

[0036] Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the concept of example embodiments to those skilled in the art. The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided in order to give a thorough understanding of embodiments of the present disclosure. However, those skilled in the art will appreciate that the technical solutions of the present disclosure may be practiced without one or more of the specific details being omitted, or other methods, components, devices, steps, etc. may be adopted. In other instances, well-known technical solution...

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Abstract

The invention provides an integrated circuit structure and a memory, and relates to the technical field of semiconductor memories. The integrated circuit structure includes: a pad region including a plurality of signal pads arranged in a target direction; the first circuit area that is arranged on one side of the bonding pad area and comprises a plurality of signal input circuit modules which are arranged in the target direction and correspondingly connected with the signal bonding pads, and the signal input circuit modules are used for achieving sampling operation of input signals and writing sampling results into a storage array, wherein the size of the first circuit area along the target direction is smaller than the size of the bonding pad area along the target direction. The performance of the write operation of the memory can be improved.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductor memory, and in particular, relates to an integrated circuit structure and memory. Background technique [0002] With the development of memory technology, DDR4 SDRAM (Double Data Rate Fourth Synchronous Dynamic Random Access Memory, the fourth generation of double data rate synchronous dynamic random access memory) came into being, DDR4 SDRAM has a lower power supply voltage, higher transmission The storage unit group (Bank Group) on it has the characteristics of independently starting operations such as reading and writing. In addition, compared with memory such as DDR3 / DDR2, DDR4 SDRAM not only has fast and power-saving characteristics, but also can enhance signal integrity and improve the reliability of data transmission and storage. [0003] Taking the low-power memory chip LPDDR4 as an example, during the write operation, the data strobe signal (DQS) and the data signal (DQ) a...

Claims

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Application Information

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IPC IPC(8): G11C5/02G11C5/06
CPCG11C5/025G11C5/06
Inventor 张良
Owner CHANGXIN MEMORY TECH (SHANGHAI) INC
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