Unlock instant, AI-driven research and patent intelligence for your innovation.

Preparation method and device of large array nanoneedle structure

A nanoneedle and nanoparticle technology, which is applied in the direction of nanostructure assembly, nanostructure manufacturing, and specific nanostructure formation, can solve the problems of strong randomness, poor preparation precision, and expensive preparation, and achieve strong controllability, Strong stability and large preparation area

Active Publication Date: 2022-04-15
TSINGHUA UNIV
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, photolithography is a method of preparing micro- and nano-structures by using surface ultraviolet light masking objects, which is highly dependent on the preparation of high-precision mask plates, which is expensive and difficult to achieve large-area preparation.
Chemical etching is a method of preparing nanoneedles by using chemical etchant to non-uniformly etch the substrate, but it is seriously affected by thermodynamics, the preparation is random, the shape of the nanoneedles cannot be precisely controlled, and the preparation accuracy is poor.
Laser processing and 3D printing technology have attracted much attention in the preparation of microneedle structures, but due to the limitation of their own processing precision, it is difficult to realize the preparation of nanometer-sized structures, and the processing process is very time-consuming, and it is difficult to achieve large-area preparation, thus limiting the nanoneedle structure. Wide application of structure

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method and device of large array nanoneedle structure
  • Preparation method and device of large array nanoneedle structure
  • Preparation method and device of large array nanoneedle structure

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0032] Such as figure 1 As shown, the preparation method of the large array nanoneedle structure comprises the following steps:

[0033] In step S1, the tension gradient is used to drive micro-nano particles to form a large-area self-assembled structure at the liquid-air interface, and the large-area self-assembled structure is transferred to the surface of the silicon substrate.

[0034] Specifically, firstly, the colloidal dispersion of hydrophobic polystyrene particles is added dropwise into the liquid pool, and the hydrophobic polystyrene particles spread on the liquid-air interface to form a loose particle monolayer structure. Then immerse the heating plate whose temperature is much higher than the liquid surface temperature on one side of the liquid pool at a certain speed, and form a temperature gradient from high to low along the heating plate, so the liquid-air interface forms a tension gradient (liquid-air interface) Tension decreases with increasing temperature), t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method and device for preparing a large-area nano-needle structure, comprising: using tension gradients to drive micro-nano particles to form a large-area self-assembled structure at a liquid-gas interface, and transferring it to the surface of a silicon substrate. Oxygen reactive ion etching technology is used to adjust the particle diameter in the large-area self-assembled structure to form a non-closely arranged periodic micro-nano particle structure. The gold-plated layer was prepared on the surface of non-closely arranged periodic grain structure by electron beam evaporation. The particles are then removed by ultrasonic cleaning to form a periodic surface with alternately arranged gold-plated layers and silicon substrates. The substrate is placed in a hydrofluoric acid / hydrogen peroxide mixed solution for gold-catalyzed etching to form a nano-column structure. Finally, the nano-pillar structure was non-uniformly etched by sulfur hexafluoride reactive ion etching technology to form a large array nano-needle structure. The method has large preparation area, high preparation precision, strong shape controllability and high preparation stability.

Description

technical field [0001] The invention relates to the technical field of nanoneedle preparation, in particular to a method and device for preparing a large area array nanoneedle structure. Background technique [0002] Due to the "size effect" and other effects, the micro- and nano-needle structures have many unique characteristics in terms of light, electricity, magnetism, force, etc., and have gradually become a research hotspot. It has been widely used in interpretation and other fields. At present, photolithography, chemical etching, laser processing, and 3D printing technologies are common methods for preparing micro- and nano-needle structures. Among them, photolithography is a method of preparing micro- and nano-structures by using surface ultraviolet light masking materials, which is highly dependent on the preparation of high-precision mask plates, which is expensive and difficult to achieve large-scale preparation. Chemical etching is a method of preparing nanoneed...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B82B3/00B82Y40/00
CPCB82B3/0014B82B3/0004B82B3/0042B82Y40/00
Inventor 汪家道马原李轩
Owner TSINGHUA UNIV