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A method for preparing the secondary structure of si nanowell/zno nanorod array

A technology of nanorod array and secondary structure, which is applied in the direction of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problems of complicated preparation process, and achieve mature preparation process, fast speed and high processing technology. mature effect

Active Publication Date: 2016-07-06
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the complexity of its preparation process, there is still a certain distance from technology promotion

Method used

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  • A method for preparing the secondary structure of si nanowell/zno nanorod array

Examples

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example 1

[0038] Example 1: Preparation of a nano-ZnO-Si secondary array with a pore size of 500nm and a crystal height of 150nm

[0039] (1) Fabrication of Si nanowell arrays

[0040] Using three-beam laser interference technology, combined with metal-catalyzed etching, the substrate is sequentially cleaned, glued, exposed, developed, sprayed with gold, and etched to prepare a patterned Si nanowell array.

[0041] (2) Remove the gold film

[0042] Mix concentrated nitric acid and concentrated hydrochloric acid at a volume ratio of 1:3 to prepare aqua regia. The material obtained in the previous step was soaked in aqua regia for 5 minutes, then rinsed with deionized water several times, and then dried with nitrogen to obtain a Si nanowell array without gold attachment.

[0043] (3) Preparation of seed liquid

[0044] Take 0.5mol / L zinc acetate and 0.5mol / L ethanolamine solution and mix them according to the volume ratio of 1:1 to make a seed solution for growing ZnO crystals.

[004...

example 2

[0054] Example 2: Preparation of a nano-ZnO-Si secondary array with a pore size of 500nm and a crystal height of 100nm

[0055] (1) Fabrication of Si nanowell arrays

[0056] Using three-beam laser interference technology, combined with metal-catalyzed etching, the substrate is sequentially cleaned, glued, exposed, developed, sprayed with gold, and etched to prepare a patterned Si nanowell array.

[0057] (2) Remove the gold film

[0058] Mix concentrated nitric acid and concentrated hydrochloric acid at a volume ratio of 1:3 to prepare aqua regia. The material obtained in the previous step was soaked in aqua regia for 5 minutes, then rinsed with deionized water several times, and then dried with nitrogen to obtain a Si nanowell array without gold attachment.

[0059] (3) Preparation of seed liquid

[0060] Take 0.5mol / L zinc acetate and 0.5mol / L ethanolamine solution and mix them according to the volume ratio of 1:1 to make a seed solution for growing ZnO crystals.

[006...

example 3

[0069] Example 3: Preparation of a nano-ZnO-Si secondary array with a pore size of 900nm and a crystal height of 200nm

[0070] (1) Fabrication of Si nanowell arrays

[0071] Using three-beam laser interference technology, combined with metal-catalyzed etching, the substrate is sequentially cleaned, glued, exposed, developed, sprayed with gold, and etched to prepare a patterned Si nanowell array.

[0072] (2) Remove the gold film

[0073] Mix concentrated nitric acid and concentrated hydrochloric acid at a volume ratio of 1:3 to prepare aqua regia. The material obtained in the previous step was soaked in aqua regia for 5 minutes, then rinsed with deionized water several times, and then dried with nitrogen to obtain a Si nanowell array without gold attachment.

[0074] (3) Preparation of seed liquid

[0075] Take 0.6mol / L zinc acetate and 0.6mol / L ethanolamine solution and mix them according to the volume ratio of 1:1 to prepare the seed solution for growing ZnO crystals.

...

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Abstract

Disclosed is a method for preparing a Si nanometer well / ZnO nanometer rod array secondary structure. According to the method, the combination of a Si nanometer well array etching technology and a ZnO crystalline hydrothermal method growing technology is realized, ZnO nanometer rods are made to grow inside a Si nanometer well, and the Si nanometer well / ZnO nanometer rod secondary structure is obtained. The method has the advantages that the light absorbing efficiency of materials and the photoelectric converting rate of the materials can be guaranteed at the same time, the materials are controllable in shape and appearance, and the structure can be directly adjusted and controlled through changing of technology parameters; raw materials are low in cost, the processing technology is mature, speed is high, and large-area and high-density preparation can be realized. Si and ZnO are combined in the method, and Si-ZnO heterojunctions which are arranged in a high-density and patterning mode can be formed. The method is high in the rate of finished products and beneficial to following-up device application and industrialized development, and the obtained materials can be widely applied to the fields like nanometer electronics, optical electronics, photonics, catalytic materials and sensors.

Description

technical field [0001] The invention belongs to the field of preparation of nanometer materials, in particular to the patterned preparation of semiconductor nanomaterials. Background technique [0002] In recent years, nano-ZnO, a one-dimensional semiconductor with a wide band gap, has unique physical properties and photoelectric properties, such as: its band gap at room temperature reaches 3.37eV, and its high exciton binding energy (up to 60meV at room temperature) , high field electron mobility, good chemical and thermal stability, and very high transmittance from near ultraviolet to infrared. This has attracted great attention [1]. Among the single-level nano-ZnO, single-crystal ZnO nanorod arrays are widely used in optoelectronic devices such as solar cells [2, 3], field-effect transistors [4], and ultraviolet lasers [5], so they have been widely studied. [0003] The Si / ZnO heterojunction can produce a strong photovoltaic effect, so the growth and luminescent propert...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18B82Y30/00B82Y40/00
CPCY02P70/50
Inventor 张跃李峻野陈翔闫小琴冯亚瀛冯韵迪孙国帅徐佳亮方思萦
Owner UNIV OF SCI & TECH BEIJING