Sidewall assisted preparation method for multiple three-dimensional nanostructures
A three-dimensional nano, multiple technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, electrical components, etc., to achieve the effect of large preparation area, improved preparation efficiency, high structural flexibility and controllability
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0033] figure 1 It is a schematic flow diagram of a method for sidewall-assisted preparation of multiple three-dimensional nanostructures according to an embodiment of the present invention; figure 2 is a schematic diagram of the fabrication process of the sidewall-assisted fabrication method of multiple three-dimensional nanostructures according to an embodiment of the present invention. Such as figure 1 and figure 2 As shown, the invention provides a method for sidewall-assisted preparation of multiple three-dimensional nanostructures, which specifically includes the following steps:
[0034] s1. Spin coating resin 2 on substrate 1, resin 2 may be photosensitive resin or electronic sensitive resin;
[0035] S2. Etching the corresponding resin 2 by photolithography or electron beam (that is, etching the photosensitive resin by photolithography, or etching the electronic sensitive resin by electron beam) to construct a three-dimensional template, so that a resin of predet...
Embodiment 1
[0050] The multiple three-dimensional nanostructure chooses quartz as the substrate;
[0051] Spin-coat 900nm thick electron beam sensitive resin PMMA 950A7 on the surface of the quartz plate;
[0052] Through electron beam exposure, the electron beam voltage is 100Kv, the current is 200pA, and the electron dose is 1600μC / cm 2 ; Expose the array of circular holes on the photoresist, the diameter of the small holes is about 100nm, and the period is 800nm.
[0053] By atomic layer deposition, 20nm titanium oxide was deposited on PMMA photoresist, the deposition temperature was 85°C, and the reaction precursors were titanium tetradimethylammonia and ultrapure water.
[0054] The surface titanium oxide and the surface carbide layer are etched away by inductively coupled plasma dry etching. The process gas used to etch the titanium oxide on the surface is 8sccm boron trichloride, 32sccm chlorine gas, 20sccm argon gas, the working pressure is 15mtorr, the power is 500w, and the et...
Embodiment 2
[0058] The multiple three-dimensional nanostructure selects the peeling sheet as the base;
[0059] Spin-coat 1000nm thick electron beam sensitive resin PMMA 950A7 on the surface of the quartz sheet;
[0060] By electron beam exposure, electron beam voltage 110Kv, current 220pA, electron dose 1600μC / cm 2 ; Expose the strip array on the photoresist, the width of the strip is about 80nm, and the length is 800nm.
[0061] By PECVD (English full name Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition method), 20nm silicon nitride is deposited on the PMMA photoresist.
[0062] The silicon nitride on the surface is etched away by a wet etching method, and then the surface carbide layer is etched away by an inductively coupled plasma dry etching method. The wet etching method uses a high-temperature phosphoric acid solution to selectively etch away the silicon nitride on the surface for 40 seconds. The gas used to etch the carbonized film on the s...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More