Method for preparing single-walled carbon nanotubes with graphene as catalyst

A single-walled carbon nanotube and graphene technology, applied in carbon nanotubes, graphene, chemical instruments and methods, etc., can solve problems affecting device performance, metal residues, etc., and achieve the effect of simplifying the process

Active Publication Date: 2022-06-24
WENZHOU UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The purpose of the present invention is to provide a method for preparing single-walled carbon nanotubes using graphene as a catalyst, to solve the technical problem that metal catalysts will have metal residues in the growth of single-walled carbon nanotubes, which will affect the performance of subsequent devices

Method used

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  • Method for preparing single-walled carbon nanotubes with graphene as catalyst
  • Method for preparing single-walled carbon nanotubes with graphene as catalyst
  • Method for preparing single-walled carbon nanotubes with graphene as catalyst

Examples

Experimental program
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Effect test

Embodiment 1

[0058] in SiO 2 Carbon nanotubes are grown on a / Si substrate with single-layer graphene as a catalyst. see figure 1 shown.

[0059] The specific steps are:

[0060] Step 1, choose SiO 2 / Si substrate, cut it into 6mm × 6mm size, and preprocess this substrate, the steps are as follows:

[0061] 1), ultrasonically clean the growth substrate in ultrapure water, acetone, ethanol, and ultrapure water in turn;

[0062] 2), dry with high-purity nitrogen;

[0063] Step 2, in the treated SiO 2 The graphene is mechanically exfoliated on the / Si growth substrate, and the number of layers is one. (height map such as Figure 3b )

[0064] Step 3, growing carbon nanotubes on the substrate with graphene.

[0065] The growth substrate with single-layer graphene obtained in step 2 is placed in a chemical vapor deposition system, and the temperature rise rate of 40°C / min under argon protection is heated to a growth temperature of 830°C, and the argon gas flow rate is 300sccm. Contin...

Embodiment 2

[0068] in SiO 2 Carbon nanotubes are grown on a / Si substrate with three-layer graphene as a catalyst. refer to Figure 4 shown.

[0069] Step 1 is the same as Step 1 in Embodiment 1.

[0070] Step 2, in the treated SiO 2 / Mechanical exfoliation of graphene on Si growth substrate, the number of layers is three (the height map is shown in Figure 5b ). Specifically, 5a, 5b, and 5c are the characterization diagrams of the growth results in Example 2, wherein Figure 5a for the AFM map, Figure 5b is the height curve of graphene, Figure 5c is the height curve of single-walled carbon nanotubes.

[0071] Step 3, growing carbon nanotubes on the substrate with graphene.

[0072] The growth substrate with single-layer graphene obtained in step 2 was placed in a chemical vapor deposition system, and the temperature was increased to a growth temperature of 830 °C at a heating rate of 40 °C / min under the protection of argon gas, and the flow rate of argon gas was 300 sccm. Con...

Embodiment 3

[0074] Carbon nanotubes were grown on ST-cut quartz substrate with single-layer graphene as catalyst.

[0075] Step 1, select ST-cut quartz substrate, pretreat it, and process the growth substrate including the following steps:

[0076] 1), ultrasonically clean the growth substrate in ultrapure water, acetone, ethanol, and ultrapure water in turn;

[0077] 2), dry with high-purity nitrogen;

[0078] 3), put the cleaned substrate into a muffle furnace, anneal at high temperature in air, raise to 900 °C for 2 h, hold at 900 °C for 8 h, then cool down to 300 °C for 10 h, and cool down naturally;

[0079] In step 2, different layers of graphene are mechanically peeled off on the treated ST-cut quartz growth substrate, and the number of layers is 1-10 layers.

[0080] Step 3, growing carbon nanotubes on the substrate with graphene.

[0081] The growth substrate with single-layer graphene obtained in step 2 was placed in a chemical vapor deposition system, and the temperature was...

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Abstract

The invention discloses a method for preparing single-walled carbon nanotubes and all-carbon heterojunctions using graphene as a catalyst. Step 1, the growth substrate is processed, and the steps are as follows: Ultrasonic cleaning of the growth substrate; s2, drying with high-purity nitrogen; s3, putting the cleaned substrate into a muffle furnace, annealing at high temperature in air, rising to 900 °C for 2 h, keeping the temperature at 900 °C for 8 h, and then 10 h Cool down to 300°C, and cool down naturally; Step 2, mechanically exfoliate graphene on the treated growth substrate, the number of layers is 1-10 layers; Step 3, grow carbon nanotubes on the substrate deposited with graphene, in chemical The gas phase deposition system is fed with hydrogen and carbon sources to grow single-walled carbon nanotubes; step 4, according to the following preparation process, the all-carbon heterojunction provided by the present invention is made into a field effect transistor device. The process of single-wall carbon nanotubes does not contain metal, and can be used to prepare field-effect transistor devices with stable performance.

Description

technical field [0001] The invention relates to the field of preparation of single-walled carbon nanotubes, in particular to a method for preparing single-walled carbon nanotubes by using graphene as a catalyst. Background technique [0002] Single-walled carbon nanotubes (SWNTs) are all composed of carbon atoms. The geometric structure can be regarded as a single-layer graphene coil. The structure determines the properties. Therefore, single-walled carbon nanotubes have excellent electronic, mechanical, and mechanical properties. At the same time, according to the curled structure, single-walled carbon nanotubes have three types: armchair type, zigzag type and chirality; according to the electronic structure, single-walled carbon nanotubes have semiconductor type and metal type (including metalloid type and metal type). [0003] SWNTs have great potential applications in electronics, optoelectronics, sensors, drug delivery, catalyst supports, and composite materials. Theor...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/162C01B32/159C01B32/19
CPCC01B32/162C01B32/159C01B32/19C01B2204/04
Inventor 胡悦张红杰钱金杰黄少铭
Owner WENZHOU UNIV
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