A high-power silicon carbide diode and its manufacturing method

Abstract

The invention provides a high-power silicon carbide diode and a manufacturing method thereof, comprising a first lead, a second lead, a first silicon carbide chip, a second silicon carbide chip, an insulating package, a first conductive plastic, a second Conductive plastic. The production method of the high-power silicon carbide diode of the present invention can be completed after bending, welding, plastic sealing, glue repair, and coating. The process is simple, the gold wire welding process is omitted, the processing efficiency is high, and the high-power carbonized Silicon diodes, the first silicon carbide chip and the second silicon carbide chip are arranged oppositely and welded on the first pin and the second pin respectively, which can reduce the volume of the insulating package after molding, and solve the problem of the large size of conventional silicon carbide diodes. The problem.

Description

technical field

[0001] The invention relates to the technical field of diodes, in particular to a high-power silicon carbide diode and a manufacturing method thereof. Background technique

[0002] Silicon carbide material has the characteristics of wide band gap, high breakdown field strength, high thermal conductivity, high saturation electron migration rate and excellent physical and chemical stability, and is suitable for working in high temperature, high frequency, high power and extreme environment, so Some diodes use silicon carbide materials to replace traditional silicon materials to make silicon carbide diodes.

[0003] Usually, in order to increase the power of silicon carbide diodes, two silicon carbide chips are generally connected in parallel, such as figure 1 circuit schematic shown. For this high-power silicon carbide diode, two silicon carbide chips are usually welded together on the same conductive plate, such as figure 2 The structure of the first conve...

Images