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Polishing pad with end point detection window and application thereof

An endpoint detection and polishing pad technology, applied in the direction of grinding tools, etc., can solve problems such as scratches on the surface of the detection window, aggregation of abrasive particles and polishing debris, and affect the accuracy of endpoint detection, so as to improve surface quality, improve low defect, The effect of reducing scratches

Active Publication Date: 2021-08-13
万华化学集团电子材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, in the polishing process of a polishing pad with an end point detection window, due to the difference in physical properties between the detection window and the polishing surface, the flow performance of the polishing medium flowing through the two is likely to change, and the abrasive particles and polishing debris in the polishing medium are easy to produce Agglomeration, which not only affects the surface flatness of the polished wafer, but also causes defects such as scratches on the surface of the detection window, and even affects the accuracy of the end point detection

Method used

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  • Polishing pad with end point detection window and application thereof
  • Polishing pad with end point detection window and application thereof
  • Polishing pad with end point detection window and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0068] Such as figure 1 In the shown polishing pad structure, a polishing pad groove form in this embodiment is as follows:

[0069] The detection window is a rectangle, the L side length = 13mm, the W side length = 8mm;

[0070] The thickness of the polishing layer is 1.8mm;

[0071] The first groove: concentric circle shape, groove depth D 1 =0.5mm, the groove spacing is 1.5mm, and the groove width is 0.5mm;

[0072] Second groove: groove depth D 2 =1.0mm, bottom inverted triangle angle θ=30°, groove width 0.4mm, groove length equal to the length of the side L of the window.

Embodiment 2

[0074] Such as Figure 5 In the shown polishing pad structure, a polishing pad groove form in this embodiment is as follows:

[0075] The window is in the shape of a rectangle, the length of the L side = 18mm, and the length of the W side = 11mm;

[0076] Polishing layer thickness 2mm;

[0077] The first groove: in the shape of a concentric quadrilateral, the groove depth D 1 =0.66mm, the groove spacing is 2.5mm, and the groove width is 0.4mm;

[0078] Second groove: groove depth D 2 =1.1mm, bottom inverted triangle angle θ=45°, groove width 0.3mm, groove length equal to the length of the side L of the window.

Embodiment 3

[0080] Such as figure 1 In the shown polishing pad structure, a polishing pad groove form in this embodiment is as follows:

[0081] The window is rectangular, the L side length = 23mm, the W side length = 15mm;

[0082] The thickness of the polishing layer is 2.5mm;

[0083] The first groove: concentric circle shape, groove depth D 1 =0.9mm, groove spacing is 3.2mm, groove width 0.6mm;

[0084] Second groove: groove depth D 2 =1.5mm, bottom inverted triangle angle θ=60°, groove width 0.5mm, groove length less than window L side length, which is 20mm.

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Abstract

The invention discloses a polishing pad with an end point detection window and application thereof.The polishing pad at least comprises a polishing surface and the end point detection window, the polishing surface is at least provided with a first groove and a second groove, and the first groove is in a concentric circle or concentric polygon shape with the center of the polishing pad as the circle center. The second grooves are located at the two faces, intersecting with the first grooves, of the adjacent windows. According to the polishing pad with the end point detection window, damage to the surface flatness of a polished wafer in the polishing process can be avoided, and meanwhile scratches caused by the polishing window are reduced.

Description

technical field [0001] The invention belongs to the technical field of chemical mechanical polishing, and in particular relates to a chemical mechanical polishing pad with an end point detection window and a special groove form. Background technique [0002] Chemical Mechanical Polishing or Chemical Mechanical Planarization (CMP for short) refers to the process of grinding a semiconductor wafer on a rotating grinding plane under the action of a specific temperature, pressure and polishing medium, or The grinding effect achieved by rotating the wafer on the grinding plane. During the grinding process to remove defects on the wafer surface such as rough surfaces, agglomerated material, lattice disruption, scratches and contaminated layers. [0003] During polishing, an endpoint detection system is often used to detect the polishing endpoint in situ to determine when the desired degree of planarization is achieved. The in-situ detection method involves a polishing pad with a ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/20B24B37/26
CPCB24B37/205B24B37/26
Inventor 谢毓王凯
Owner 万华化学集团电子材料有限公司