Light-emitting chip module, its preparation method, array substrate and display panel
A technology for light-emitting chips and array substrates, which is applied in the fields of preparation methods, light-emitting chip modules, array substrates, and display panels, can solve problems such as unstable reliability of color transfer layers, and achieve improved effectiveness and stability, and increased Effect of Luminous Intensity
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no. 1 example
[0069] Figure 3A It is a flow chart of the first part of the preparation steps of the light-emitting chip module preparation method shown in the first embodiment, Figure 3B It is a flowchart of the second part of the preparation steps of the light-emitting chip module preparation method shown in the first embodiment, Figure 3C It is a flowchart of the third part of the preparation steps of the light-emitting chip module preparation method shown in the first embodiment, Figure 3D It is a flowchart of the preparation steps of the fourth part of the light-emitting chip module preparation method shown according to the first embodiment.
[0070] The method for preparing a gallium nitride-based light-emitting diode light-emitting chip module shown in the first embodiment is mainly characterized in that after the chip light-emitting layer is formed, the protective layer 3 is peeled off first, and then the color transfer layer is prepared on the buffer layer to complete the color...
no. 5 example
[0115] Figure 7A is a flowchart of the third part of the preparation steps of the light-emitting chip module preparation method shown according to the fifth embodiment, and Figure 7B It is a flowchart of the fourth part of the preparation steps of the light-emitting chip module preparation method shown according to the fifth embodiment.
[0116] The preparation method of the fifth embodiment is basically the same as the first two parts of the preparation steps a-g of the preparation method of the fourth embodiment, so it will not be repeated. The main difference between the preparation method of the fifth embodiment and the preparation method of the fourth embodiment is that the first The preparation method of the fifth embodiment comprises the following steps:
[0117] h. Dig a hole in the gallium nitride (GaN) buffer layer 2, first transfer the chip to the temporary substrate 8, and form a temporary flat layer 7 between the temporary substrate 8 and the pad 9; the tempora...
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