Method for solving critical strain of graphene
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- CHONGQING UNIV OF POSTS & TELECOMM
- Publication Date
- 2021-08-17
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Abstract
Description
technical field
[0001] The invention relates to the field of two-dimensional nanomaterials, in particular to a new method for solving the critical strain of graphene. Background technique
[0002] In 2004, humans obtained graphene for the first time using micromechanical exfoliation. Due to its excellent mechanical, thermal, electrical, magnetic and acoustic properties, it is expected to be widely used in high-performance nanoelectronic devices, composite materials, field emission materials, gas sensors, energy storage, etc. Potential new materials. With the successive discoveries of silicene and germanene, two-dimensional materials represented by graphene have become the new stars that scientists are most concerned about in industries such as looking for future electronics and composite materials. Therefore, a comprehensive grasp and in-depth understanding of the mechanical properties play an irreplaceable role in the development and application of the entire graphene-lik...