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Chemical polishing etching solution for MBA-2 copper alloy

An MBA-2, chemical polishing technology, used in scientific instruments, material analysis by optical means, measuring devices, etc., can solve the problems of difficult to grasp the corrosion effect, difficult to promote, and the corrosion is not in place, to save the polishing process. , Avoid excessive corrosion and improve efficiency

Inactive Publication Date: 2021-08-24
金川镍钴研究设计院有限责任公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there is no uniform standard for MBA-2 copper alloy polishing agent, usually using HCl+FeCl 3 The mixed solution is used as a polishing etchant. This polishing etchant will pollute the surface of the sample. At the same time, this corrosive solution is highly acidic, and the corrosion effect is not easy to grasp. Inadequate corrosion and excessive corrosion often occur, and there is a certain degree of corrosion during operation. Due to the technical difficulty, the chemical polishing and etching of MBA-2 copper alloy is difficult to be popularized.

Method used

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  • Chemical polishing etching solution for MBA-2 copper alloy
  • Chemical polishing etching solution for MBA-2 copper alloy
  • Chemical polishing etching solution for MBA-2 copper alloy

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Embodiment 1 A kind of MBA-2 copper alloy chemical polishing etching solution, this etching solution refers to adding 3g of ferric trichloride to the following volume parts mixed solution, mixes uniformly to obtain: 12mL volume concentration is the acetic acid of 36%, 24mL of 38% hydrochloric acid and 54mL of 85% ethanol.

[0019] A kind of using method of MBA-2 copper alloy chemical polishing etchant:

[0020] Place the MBA-2 copper alloy sample with a smooth surface after sandpaper grinding in the MBA-2 copper alloy chemical polishing and etching solution, and etch at 60°C for 5 minutes to obtain a chemical polishing and etching sample for microscope observation.

[0021] Metallographic results of the MBA-2 copper alloy sample after chemical polishing etchant etching in this embodiment, the crystal grains are clearly visible without obvious scratches, such as figure 2 shown.

Embodiment 2

[0022] Example 2 A MBA-2 copper alloy chemical polishing etchant is the same as Example 1.

[0023] A kind of using method of MBA-2 copper alloy chemical polishing etchant:

[0024] Place the MBA-2 copper alloy sample with a smooth surface after sandpaper grinding in the MBA-2 copper alloy chemical polishing etching solution, and etch at 20°C for 20 minutes to obtain a chemical polishing etching sample for microscope observation.

[0025] Metallographic results of the MBA-2 copper alloy sample after chemical polishing etchant etching in this embodiment, the crystal grains are clearly visible without obvious scratches, such as image 3 shown.

Embodiment 3

[0026] Example 3 A MBA-2 copper alloy chemical polishing etchant, the etchant is prepared by adding 3g of ferric nitrate to the following mixed solution by volume and mixing uniformly: 12mL of acetic acid with a volume concentration of 37%, 24mL of Concentration of 36% hydrochloric acid, 54mL volume concentration of 90% ethanol.

[0027] A kind of using method of MBA-2 copper alloy chemical polishing etchant:

[0028] Place the MBA-2 copper alloy sample with a smooth surface after sandpaper grinding in the MBA-2 copper alloy chemical polishing etching solution, and etch at 30°C for 15 minutes to obtain a chemical polishing etching sample for microscope observation.

[0029] Metallographic results such as Figure 4 shown.

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Abstract

The invention relates to an MBA-2 copper alloy chemical polishing etching solution. The etching solution is prepared by adding 3g of ferric trichloride into a mixed solution comprising, in parts by volume as follows, 12 parts of acetic acid with the volume concentration of 36%-37%, 24 parts of hydrochloric acid with the volume concentration of 36%-38% and 54 parts of ethanol with the volume concentration of 85%-90%, and uniformly mixing the mixed solution. According to the polishing etching solution, the crystal phase can be distinguished more easily, and evaluation of the product quality is more facilitated; the polishing etching solution is simple in using method, high in operability, low in dependence on equipment and facilities and obvious in using effect and has certain generalization performance.

Description

technical field [0001] The invention relates to the technical field of metallographic testing, in particular to an MBA-2 copper alloy chemical polishing etchant. Background technique [0002] Metallography is an important content of metallographic research and an important reference parameter in production. Metallographic phase mainly includes microstructure morphology, grain size, etc. The grain size of the structure affects the mechanical properties and plasticity of the structure. The smaller the degree, the plasticity preference; there are defects such as slag inclusions in the structure, and the metal performance is not good. [0003] MBA-2 (CuZn30Mn3Al3Si1NiCr) is a kind of multi-component complex brass. It is often necessary to carry out metallographic inspection on MBA-2 copper alloy in production. In testing, it is usually necessary to wipe the surface of the sample with a cotton ball dipped in etching solution after the sample is mechanically polished. At present...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N1/32G01N21/84
CPCG01N1/32G01N21/84
Inventor 赵堂昌凌得魁王雪连张戬刘长仨
Owner 金川镍钴研究设计院有限责任公司