Semiconductor laser with high single longitudinal mode stability

A laser and semiconductor technology, applied in semiconductor lasers, lasers, laser parts, etc., can solve the problems of high precision requirements for the production of resonant tunneling structures, and achieve the effects of miniaturization, cost reduction, and size reduction.

Inactive Publication Date: 2021-08-24
日照市艾锐光电科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the manufacturing precision of the resonant tunneling structure is relatively high.

Method used

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  • Semiconductor laser with high single longitudinal mode stability
  • Semiconductor laser with high single longitudinal mode stability
  • Semiconductor laser with high single longitudinal mode stability

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Embodiment 1

[0042] The total cavity length of the device is 330 μm, L 1 =L 2 = 13 microns, w 2 = 3 microns, θ g = 2 degrees, δλ B = 40 nm, Image 6 (a) and (b) are respectively the multimode spectrum of the common FP laser and the single longitudinal mode lasing spectrum obtained after the present invention adopts the detuned double grating region, and the result shows that the edge of the single mode laser proposed by the present invention The mode rejection ratio is as high as 50dB. Figure 7 The immunity of the single-mode laser proposed by the present invention and the traditional IC-DFB laser to external feedback light is compared, that is, when the phase of the feedback light signal changes from 0 to 2π under different external optical feedback intensities, the laser single-mode Yield changes. It can be seen that the single-mode yield of the device of the present invention is higher than that of the traditional IC-DFB laser, and is hardly disturbed by external feedback light, ...

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Abstract

The invention relates to a semiconductor laser with high single longitudinal mode stability. The semiconductor laser is characterized in that a passive detuning double-grating area is introduced into a traditional FP laser, and a nonlinear saturation effect of a gain medium of a Fabry-Perot cavity is used as a nonlinear gain element, so that a novel semiconductor laser is constructed. A frequency spectrum is purified through the high-Q band-pass filtering of a detuning double-grating area and according to the intrinsic multi-lasing mode of the FP cavity, then the frequency spectrum is slightly broadened through the amplification of the nonlinear gain medium of an active area of the FP laser, and the operations are repeated, so that the frequency spectrum of the laser is greatly narrowed after multiple times of filtering, and finally the single-mode lasing oscillation is formed.

Description

technical field [0001] The invention belongs to the field of semiconductor lasers, in particular to a semiconductor laser with high single longitudinal mode stability. Background technique [0002] With the rapid development of the Internet and the rapid advancement of big data, single longitudinal mode semiconductor lasers, as one of the main light source devices, are in great demand in the fields of telecommunications and data communications. The high-speed modulation characteristics of the device, the narrow linewidth characteristics of the output spectrum, and the stability of the output light source have all been continuously improved with the higher requirements of users. Single longitudinal mode semiconductor lasers usually use a distributed feedback mechanism to achieve single-mode operation, such as coupled cavity mechanism, distributed feedback laser (DFB), and distributed Bragg reflector laser (DBR). [0003] Usually, coupled-cavity lasers have very strict requir...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/065H01S5/22
CPCH01S5/22H01S5/0654
Inventor 陈洋俊奚燕萍
Owner 日照市艾锐光电科技有限公司
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