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IGBT series-parallel connection compatible unit based on H-bridge rectification

A technology for connecting and connecting units in parallel, which is applied to electrical components, output power conversion devices, and AC power input to DC power output. Improved reliability, symmetrical circuit layout, and low cost

Pending Publication Date: 2021-08-27
CHANGZHOU BORI ELECTRIC POWER AUTOMATION EQUIP +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] With the continuous improvement of voltage and current levels, the cost of traditional IGBT valve strings in flexible DC transmission drive lines is getting higher and higher, and the lines are becoming more and more complicated.
When IGBTs are used in series, there are mainly two common crimping methods: vertical and horizontal; when IGBTs are used in parallel, factors such as circuit layout asymmetry will cause unbalanced current distribution through the IGBTs, which greatly reduces the reliability of the device. performance, and if multiple IGBTs are used for parallel crimping, the volume of the valve string will be greatly increased and it is not conducive to expansion

Method used

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  • IGBT series-parallel connection compatible unit based on H-bridge rectification
  • IGBT series-parallel connection compatible unit based on H-bridge rectification
  • IGBT series-parallel connection compatible unit based on H-bridge rectification

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] refer to figure 1, as the first embodiment of the present invention, an IGBT series-parallel compatible unit based on H-bridge rectification is provided, and the compatible unit includes an IGBT valve string unit 100 , a connecting unit 200 and a diode valve string unit 300 . Among them, the connection unit 200 is used to connect the IGBT valve string unit 100 and the diode valve string unit 300. The diode valve string unit 300 enables the unidirectional IGBT valve string unit 100 to flow in both directions by constructing an H-shaped bridge rectification structure, which can save With half the number of IGBT units 101, the cost can be significantly reduced.

[0037] Specifically, the IGBT valve string unit 100 includes N groups of IGBT units 101, and the number of N is not less than 1. The IGBT units 101 are connected through conductive components 102 to form a series structure C or a parallel structure B, and adjacent IGBTs The units 101 are insulated from each other...

Embodiment 2

[0041] refer to figure 1 , 2 and 5-8 are the second embodiment of the present invention, in which the specific structure and composition of the IGBT valve string unit 100 are described in detail, which is different from the first embodiment in that: the IGBT unit 101 includes an IGBT101a And the first conductive block 101b and the second conductive block 101c arranged on the upper and lower sides of the IGBT101a; and the first conductive block 101b is connected to the emitter of the IGBT101a, and the second conductive block 101c is connected to the collector of the IGBT101a.

[0042] Compared with Embodiment 1, further, each group of IGBT units 101 has the same structure, including IGBT101a, first conductive block 101b and second conductive block 101c, specifically, the first conductive block 101b and the emitter of IGBT101a The second conductive block 101c is connected to the collector of the IGBT101a. Each group of IGBT units 101 is independent of each other and kept insula...

Embodiment 3

[0054] refer to Figure 4 and 5 , is the third embodiment of the present invention, and this embodiment is different from the second embodiment in that: one end of the first copper bar 201 and the second copper bar 202 are respectively connected to the first copper bar 201 of the IGBT unit 101 through the connection hole T-1 One conductive block 101b is connected to the second conductive block 101c, and the other end is connected to the first diode valve string 301 and the second diode valve string 302 respectively.

[0055] The first copper bar 201 connects the IGBT unit 101 with the first diode valve string 301, and the second copper bar 202 connects the IGBT unit 101 with the second diode valve string 302. It should be noted that the connection of the two copper bars The line is not limited to this kind.

[0056] Further, the structure of the first diode valve string 301 and the second diode valve string 302 are the same; wherein, the first diode valve string 301 includes...

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Abstract

The invention discloses an IGBT series-parallel connection compatible unit based on H-bridge rectification, the compatible unit comprises a valve string unit, a connection unit and a diode valve string unit, the valve string unit comprises N groups of IGBT units, the number of N is not less than 1, the IGBT units are connected through conductive components to form a series connection structure or a parallel connection structure, and the adjacent IGBT units are insulated from each other; the connecting unit comprises a first copper bar and a second copper bar which are respectively connected with the IGBT unit; the diode valve string unit is connected with the connecting unit and comprises a first diode valve string, a second diode valve string and a wire inlet and outlet copper bar connected with the first diode valve string and the second diode valve string; the main body structures of the three groups of valve strings are not changed, the IGBT valve strings of odd-numbered stages and even-numbered stages can be connected in series and in parallel in a crimping manner through the conductive components, the universality is high, the size is small, the cost is low, the expansion is easy, and the method is suitable for higher voltage and current grades.

Description

technical field [0001] The invention relates to the technical field of flexible direct current transmission devices, in particular to an IGBT series-parallel compatible unit based on H-bridge rectification. Background technique [0002] Compared with conventional DC transmission, flexible DC transmission has the advantages of flexible operation control, high degree of intelligence, no dependence on the AC system, and various operation modes. It provides a new solution for scenarios such as asynchronous grid interconnection and new energy access. . The realization of this advanced power transmission technology is inseparable from the application of fully controlled power electronic devices. Insulated Gate Bipolar Transistor (IGBT) is a representative of fully controlled power electronic devices, and is the core component for controlling, transmitting and transforming electric energy in flexible direct current transmission systems. [0003] With the continuous improvement of...

Claims

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Application Information

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IPC IPC(8): H02M7/00H02M7/06H02M7/23H02M7/25
CPCH02M7/003H02M7/066H02M7/23H02M7/25
Inventor 李骏姚宁王智勇李德召杨兵孙超张广泰苏雷
Owner CHANGZHOU BORI ELECTRIC POWER AUTOMATION EQUIP
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