Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of cerium dioxidesingle crystal

A single crystal and quartz tube technology, which is applied in the field of preparation of cerium antimonide single crystals, can solve the problems of high residual resistivity, poor crystallinity and small size of single crystals, and achieves high residual resistivity, large crystal size, and high crystallinity. good effect

Active Publication Date: 2021-09-03
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention aims at the problems of poor crystallinity, small size and heterogeneous crystal quality of the single crystals grown in the prior art, and provides a method for preparing cerium antimonide single crystals, which can prepare large-sized cerium antimonide single crystals. crystal, which has the characteristics of high purity, good crystallinity, and high residual resistivity, and can be used in spintronic devices with good performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of cerium dioxidesingle crystal
  • Preparation method of cerium dioxidesingle crystal
  • Preparation method of cerium dioxidesingle crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] see figure 1 , figure 1 It is a schematic diagram of the growth device of the cerium antimonide single crystal of the present invention, as can be seen from the figure, the preparation method of the cerium antimonide single crystal of the present invention, the preparation method comprises the following steps:

[0038] 1) Perform standard cleaning on the quartz tube 7, the quartz plug 8, the crucible 1 and the crucible cover 4 to remove surface pollutants, and scrape off the surface pollutants of Ce and Sb blocks (or particles) as reaction raw materials and co-solvents;

[0039]2) Configure Ce and Sb blocks (or particles) 2 as reaction raw materials and cosolvents, and place them in crucible 1 after mixing, wherein the molar ratio of Ce and Sb blocks (or particles) is: n(Ce):n(Sb )=1:11.5;

[0040] 3) Bonding and sealing the crucible cover 4 and the crucible 1 with a high temperature resistant sealant, and placing the sealed crucible 4 at the bottom of the quartz tube...

Embodiment 2

[0049] A method for preparing a cerium antimonide single crystal, the preparation method comprising the following steps:

[0050] 1) Carry out standard cleaning to quartz tube 7, quartz stopper 8, crucible 1 and crucible cover 4, remove surface pollutant, scrape off the surface pollutant of Ce and Sb block (or particle) as reaction raw material and auxiliary solvent, so The material of the crucible and crucible cover is alumina;

[0051] 2) Configure Ce and Sb blocks (or particles) 2 as reaction raw materials and cosolvents, and place them in crucible 1 after mixing, wherein the molar ratio of Ce and Sb blocks (or particles) is: n(Ce):n(Sb )=1:19;

[0052] 3) bonding and sealing the crucible cover 4 and the crucible 1 with a high temperature resistant sealant, and placing the sealed crucible 1 at the bottom of the quartz tube 7;

[0053] 4) Insert the quartz tube 7 loaded into the crucible 1 into the quartz plug 8, and evacuate to a vacuum of 3*10 -3 mbar, keeping the vacuu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a preparation method of a cerium dioxidesingle crystal. The method comprises the following steps: preparing Ce and Sb blocks (or particles) as reaction raw materials and cosolvents, mixing, and placing in a crucible; covering the crucible, placing the crucible in a quartz tube, and vacuumizing and sealing the quartz tube; putting the sealed quartz tube into a muffle furnace, and raising the temperature to 1170K; keeping the temperature at 1170K for more than 10 hours, and then slowly cooling to 940-950K; taking out the quartz tube from the furnace in a high-temperature state, and immediately centrifuging; and after centrifugation is finished, taking out the crucible from the quartz tube, and stripping the cosolvent and impurities on the surface of a product in the crucible to obtain the cerium antimonide single crystal. According to the invention, the large-size cerium dioxidesingle crystal can be prepared, has the characteristics of high purity, good crystallinity and high residual resistivity, and can be used for spintronics devices with good performance.

Description

technical field [0001] The invention relates to a rare earth alloy material, in particular to a method for preparing a cerium antimonide single crystal. Background technique [0002] Rare earth alloy materials have achieved tremendous development in the past few decades. Because of their rich physical properties, they can be applied to electronic devices such as magnetic storage, refrigeration, and magnetic sensors. Applications. [0003] Since the 1960s, the research on rare earth antimonides has started, and a wealth of physical phenomena have been discovered, such as magnetism, superconductivity, heavy fermions, magnetoresistance effects, etc., but judging from the number of research reports, The research on cerium antimonide is still lacking because the Ce-Sb phase diagram is very complicated [see literature 1: Xuping Su, Jean-Claude & Tedenac, Thermodynamic modeling of the ternary Ce–Fe–Sb system: Assessment of the Ce–Sb and Ce–Fe systems, Calphad.30, (2006) 455-460.]...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/10C30B9/12
CPCC30B29/10C30B9/12
Inventor 方依霏张书隆陈飞宾博逸
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products