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Differential voltage detection circuit with wide voltage input range

A wide voltage input and differential voltage technology, applied in the field of integrated circuits, can solve the problems of small input offset voltage and narrow voltage input range, and achieve the effect of reducing input offset voltage and strong practicability

Active Publication Date: 2021-09-03
晶通微电子(南京)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The embodiment of the present application solves the technical problem that the voltage input range of the voltage comparator or operational amplifier in the prior art is relatively narrow by providing a differential voltage detection circuit with a wide voltage input range, which can operate in a wide common-mode input voltage range It can also work in a wide differential mode input voltage range and has a small input offset voltage

Method used

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  • Differential voltage detection circuit with wide voltage input range
  • Differential voltage detection circuit with wide voltage input range
  • Differential voltage detection circuit with wide voltage input range

Examples

Experimental program
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Effect test

Embodiment 1

[0075] figure 2 It is a schematic diagram of a specific implementation circuit 200 of a differential voltage detection circuit with a wide voltage input range in this embodiment, wherein,

[0076] The P-type input stage module 110 includes a first PMOS transistor 201 , a second PMOS transistor 202 , a third PMOS transistor 203 , a fourth PMOS transistor 204 and a fifth PMOS transistor 205 . The third PMOS transistor 203 , the fourth PMOS transistor 204 and the fifth PMOS transistor 205 are high-voltage PMOS transistors, and the drain-source of the high-voltage PMOS transistors can withstand tens of volts or even hundreds of volts.

[0077] Wherein, the first PMOS transistor 201 and the second PMOS transistor 202 form a differential pair, and the gate of the first PMOS transistor 201 is connected to the gate of the second PMOS transistor 202 . The first PMOS transistor 201 and the second PMOS transistor 202 share the same N well on the chip layout, that is, they share a back ...

Embodiment 2

[0116] image 3 It is a schematic diagram of a specific implementation circuit of a differential voltage detection circuit with a wide voltage input range in Embodiment 2 of the present application. The specific implementation circuit 300 of a differential voltage detection circuit with a wide voltage input range differs from Embodiment 1 only in that P type bias module 130 . The function of the P-type bias module 130 is still to provide bias and clamp functions to the transistors inside the P-type input stage 110 .

[0117] The P-type bias module 130 includes a first diode 311, a second diode 312, a third diode 313, a fourth diode 314, a fifth diode 315, a sixth diode 316, a The seven diodes 317 and the eighth diode 318, wherein the first diode 311 and the second diode 312 are high voltage diodes.

[0118] The anode of the first diode 311 is connected to the first voltage input signal 121, the anode of the second diode 312 is connected to the second voltage input signal 122...

Embodiment 3

[0125] Figure 4 It is a schematic diagram of a specific implementation circuit of a differential voltage detection circuit with a wide voltage input range in Embodiment 3 of the present application. The specific implementation circuit 400 of a differential voltage detection circuit with a wide voltage input range is implemented on the basis of Embodiment 3. The optimization, its difference with embodiment three only lies in: image 3 The sixth diode 316 and the seventh diode 317 in the P-type bias module 130 are in Figure 4 is replaced by a thirteenth PMOS transistor 416 and a fourteenth PMOS transistor 417 .

[0126] The drain of the thirteenth PMOS transistor 416 is connected to the cathode of the fourth diode 314 (ie, the connection line 224), and the gate of the thirteenth PMOS transistor 416 is connected to the cathode of the fifth diode 315 (ie, the connection line 225). The sources of the thirteenth PMOS transistor 416 and the fourteenth PMOS transistor 417 are both...

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Abstract

The invention discloses a differential voltage detection circuit with a wide voltage input range. The circuit comprises a P-type input stage module which is used for receiving a voltage differential input signal and converting the voltage differential input signal into a single-ended output current, a P-type bias module which is used for providing bias voltage and voltage clamping protection for a transistor in the P-type input stage module, an N-type bias module which is used for providing bias current for the P-type bias module and the P-type input stage module and an N-type output stage module. The N-type bias module provides bias voltage or bias current for the N-type output stage module, and the N-type output stage module outputs a signal representing the relative voltage level of the differential input signal according to the difference value of the single-end output current and the bias reference current. Two differential input voltage signals can be detected and output, a wide input voltage range can be realized, the input offset voltage of the circuit can be effectively reduced, and the circuit can be used as a high-voltage comparator and a high-voltage operational amplifier and is high in practicability.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a differential voltage detection circuit with a wide voltage input range. Background technique [0002] A comparator or operational amplifier is a common circuit type used in many applications. In some applications, a wide input voltage range is required for the comparator or operational amplifier. For example, the differential input signal may be any voltage within 100 volts. The differential mode voltage will be -100 volts to +100 volts, which requires the signal input of the comparator or operational amplifier to be able to withstand the voltage input range of 100 volts. [0003] Due to the improvement of semiconductor device production technology, lower device operating power supply voltage and smaller threshold voltage have resulted. The vgs and vds of conventional low-voltage MOS transistors generally can only bear a withstand voltage of a few volts (more conve...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R19/25
CPCG01R19/25
Inventor 刘祖韬
Owner 晶通微电子(南京)有限公司
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