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Material for forming organic film, method for forming organic film, patterning process, and compound
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An organic film, organic solvent technology, applied in organic chemistry, photosensitive materials for optomechanical equipment, photosensitive material processing, etc., can solve the problem of insufficient substrate adhesion and other problems
Pending Publication Date: 2021-09-03
SHIN ETSU CHEM CO LTD
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Problems solved by technology
However, this resist underlayer film material has a problem that the adhesion to the substrate is insufficient to meet the requirements of the most advanced devices.
Method used
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[0317] Hereinafter, the present invention will be described more specifically by citing synthesis examples, comparative synthesis examples, examples, and comparative examples, but the present invention is not limited by them. In addition, the measuring method of molecular weight was specifically implemented by the following method.
[0318] [Molecular weight determination]
[0319] Determine the polystyrene-equivalent weight average molecular weight (Mw) and number average molecular weight (Mn) by GPC (gel permeation chromatography) using tetrahydrofuran as the mobile phase, and obtain the degree of dispersion (Mw / Mn) .
Synthetic example
[0320] [Synthesis Example Synthesis of Compounds for Organic Membrane Materials]
[0321] Synthesis of polymers (A1) to (A28) for organic film materials used epoxy compounds (compound group B: (B1) to (B14)) and carboxylic acid compounds (compound group C: (C1) to (C8)).
[0322] Compound group B:
[0323] [Chemical 52]
[0324]
[0325] The following uses commercially available reagents.
[0329] (B5) 1032H60 (manufactured by Mitsubishi Chemical Co., Ltd.) epoxy equivalent: 167
[0330] (B10) DAG-G (manufactured by Shikoku Chemical Industry Co., Ltd.) Epoxy equivalent: 168
[0331] (B11) TG-G (manufactured by Shikoku Chemical Industry Co., Ltd.) Epoxy equivalent: 92
[0332] (B13) EPOLIGHT MF (manufactured by Kyoei Chemical Co., Ltd.) epoxy equivalent: 140
[0333] (B...
Synthetic example 1
[0345] [Synthesis Example 1] Synthesis of Compound (A1)
[0346] [Chemical 54]
[0347]
[0348] Prepare 10.0g of epoxy compound (B1), 9.08g of carboxylic acid compound (C1), and 100g of 2-methoxy-1-propanol in a nitrogen atmosphere at an internal temperature of 100°C to make a homogeneous solution, then add benzyl 0.69 g of triethylammonium chloride was stirred at an internal temperature of 120° C. for 12 hours. After cooling to room temperature, add 200ml of methyl isobutyl ketone and dilute with 2% NaHCO 3 100 g of aqueous solution, 100 g of 3% nitric acid aqueous solution were washed twice, and then washed five times with 100 g of ultrapure water. The organic layer was dried under reduced pressure to obtain compound (A1). When the weight average molecular weight (Mw) and degree of dispersion (Mw / Mn) were determined by GPC, Mw=1030 and Mw / Mn=1.04.
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Abstract
The invention relates to an organic film forming material, an organic film forming method, a pattern forming method, and a compound. The present invention is a material for forming an organic film, including: a compound shown by the following general formula (1); and an organic solvent, where in the general formula (1), X represents an organic group with a valency of "n" having 2 to 50 carbon atoms or an oxygen atom, "n" represents an integer of 1 to 10, and R1 independently represents any of the following general formulae (2), where in the general formulae (2), broken lines represent attachment points to X, and Q1 represents a monovalent organic group containing a carbonyl group, at least a part of which is a group shown by the following general formulae (3), where in the general formulae (3), broken lines represent attachment points, X1 represents a single bond or a divalent organic group having 1 to 20 carbon atoms optionally having a substituent when the organic group has an aromatic ring, R2 represents a hydrogen atom, a methyl group, an ethyl group, or a phenyl group, and ** represents an attachment point.
Description
technical field [0001] The present invention relates to an organic film forming material for forming an organic film effective as a resist underlayer film, or as a planarizing material for semiconductor device manufacturing, etc., and the resist underlayer film is used in a manufacturing step of a semiconductor device or the like multilayer resist steps etc. used in microfabrication; and about the film forming method using the organic film forming material, the far ultraviolet rays, KrF excimer laser (248nm), ArF quasi Molecular laser (193nm), F 2 Laser (157nm), Kr laser (146nm), Ar laser (126nm), soft X-ray (EUV), electron beam (EB), ion beam, X-ray exposure pattern forming method, and as the aforementioned organic film forming material The ingredients are effective compounds. Background technique [0002] With the high integration and high speed of LSI, the miniaturization of pattern size is rapidly progressing. Together with this miniaturization, photolithography achie...
Claims
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Application Information
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