Method for monitoring carrier concentration of SiGe structure
A technology of carrier concentration and concentration, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., to achieve the effects of improving monitoring frequency, high-frequency production line stability monitoring, and efficient monitoring
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[0036] figure 1 Four Probe is a schematic diagram of a prior art SiGe structures. like figure 1 Shown, when using four-point probe tester 30 'of SiGe structures 10' of the resistivity testing, test results unstable, and there is a trend (latency) increased gradually with prolonged Q-time. And the inventors have found that instability results from the test wafer after removal of the monitoring machine growth, and gradually exposed to natural oxidation caused by air and the surface silicon atoms after the contact. Specifically, i.e. native oxide layer is SiGe 10 'hole carrier surface 101' formed on its surface structure 20 'dangling bonds charge 201' formed complex trapped charge, leading to increased resistivity, conductivity drops .
[0037] Meanwhile, data from the study of the inventors (e.g. figure 2 ) Found that a natural oxide 'has a very serious negative impact resistance test, SiGe structures 10' of the electrical resistivity SiGe structures 10 to almost linearly increased...
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