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One-dimensional conductive chain semiconductor material Ba3NbTe5 and preparation method and application thereof

A semiconductor, P63 technology, applied in the field of materials, can solve problems such as the inability to independently study the intrinsic properties of one-dimensional conductive chains, complex structures, etc.

Inactive Publication Date: 2021-09-10
HENAN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In addition to the anisotropic electrical transport properties, the currently studied one-dimensional conductive chain materials also exhibit the characteristics of one-dimensional spin chains due to the introduction of magnetic ions, which makes it impossible to independently study one-dimensional conductive chains. Intrinsic properties of
The materials with only one-dimensional conductive chain characteristics are mainly concentrated on organic materials, but the structures of these organic materials are often relatively complex, and there is a lack of in-depth research on the physical phenomena of their one-dimensional conductive chain characteristics. Therefore, to explore and prepare simple one-dimensional conductive Chain inorganic materials are of great scientific significance to the research on the physical properties of one-dimensional spin chains; in addition, the application of one-dimensional conductive chain materials in anisotropic electrical transport devices has great potential

Method used

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  • One-dimensional conductive chain semiconductor material Ba3NbTe5 and preparation method and application thereof
  • One-dimensional conductive chain semiconductor material Ba3NbTe5 and preparation method and application thereof
  • One-dimensional conductive chain semiconductor material Ba3NbTe5 and preparation method and application thereof

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Experimental program
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Effect test

Embodiment 1

[0031] First, metal Ba particles and Te powder are simply mixed in a high-purity argon atmosphere according to a stoichiometric ratio of 1:1, and placed in a ceramic tube; the ceramic tube is placed in a high vacuum (Pa-3 ) in a quartz tube, sealed, heated to 600 °C, and kept for 20 h to obtain BaTe powder. First, Nb and Te powders are simply mixed in a high-purity argon atmosphere according to a stoichiometric ratio of 1:2, and placed in a ceramic tube; the ceramic tube is placed in a high vacuum (Pa-3 ) in a quartz tube, sealed, heated to 600°C, and kept for 20h to obtain NbTe 2 powder. Then the resulting BaTe and NbTe 2 The powders were uniformly mixed according to the molar ratio of 3:1, and pressed into a cylinder with a diameter of 6 mm and a height of 3 mm by a tablet press. Then the obtained cylinder was put into a high-pressure synthesis assembly block, and a high-temperature and high-pressure experiment was carried out at a pressure of 5 GPa and a temperature of 140...

Embodiment 2

[0035] First, metal Ba particles and Te powder are simply mixed in a high-purity argon atmosphere according to a stoichiometric ratio of 1:1, and placed in a ceramic tube; the ceramic tube is placed in a high vacuum (Pa-3 ) in a quartz tube, sealed, heated to 600 °C, and kept for 20 h to obtain BaTe powder. First, Nb and Te powders are simply mixed in a high-purity argon atmosphere according to a stoichiometric ratio of 1:2, and placed in a ceramic tube; the ceramic tube is placed in a high vacuum (Pa-3 ) in a quartz tube, sealed, heated to 600°C, and kept for 20h to obtain NbTe 2 powder. Then the resulting BaTe and NbTe 2The powders were uniformly mixed according to the molar ratio of 3:1, and pressed into a cylinder with a diameter of 6 mm and a height of 3 mm by a tablet press. Then the obtained cylinder was put into a high-pressure synthesis assembly block, and a high-temperature and high-pressure experiment was carried out at a pressure of 3 GPa and a temperature of 1400...

Embodiment 3

[0038] First, metal Ba particles and Te powder are simply mixed in a high-purity argon atmosphere according to a stoichiometric ratio of 1:1, and placed in a ceramic tube; the ceramic tube is placed in a high vacuum (Pa-3 ) in a quartz tube, sealed, heated to 600 °C, and kept for 20 h to obtain BaTe powder. First, Nb and Te powders are simply mixed in a high-purity argon atmosphere according to a stoichiometric ratio of 1:2, and placed in a ceramic tube; the ceramic tube is placed in a high vacuum (Pa-3 ) in a quartz tube, sealed, heated to 600°C, and kept for 20h to obtain NbTe 2 powder. Then the resulting BaTe and NbTe 2 The powders were uniformly mixed according to the molar ratio of 3:1, and pressed into a cylinder with a diameter of 6 mm and a height of 3 mm by a tablet press. Then the obtained cylinder was put into a high-pressure synthesis assembly block, and a high-temperature and high-pressure experiment was carried out at a pressure of 8 GPa and a temperature of 140...

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Abstract

The invention provides a semiconductor material. The general chemical formula of the semiconductor material is Ba3NbTe5, the semiconductor material is of a hexagonal crystal system, the space group is P63 / mcm, the space group number is 193, and the crystal structure of the semiconductor material is connected by NbTe6 octahedrons in a surface sharing mode in the c-axis direction and is of a typical one-dimensional chain structure. The semiconductor material is prepared by the following method: firstly, mixing metal Ba particles and Te powder as well as Nb powder and Te powder according to the Ba-to-Te molar ratio of 1:1 and the Nb-to-Te molar ratio of 1:2 respectively, conducting sealing in a high-vacuum-degree quartz tube, and conducting sintering to obtain precursors BaTe and NbTe2; then fully grinding the prepared BaTe and NbTe2 according to the molar ratio of 3:1, and pressing and shaping the mixture by using a tablet press; and finally, conducting sintering at the pressure of 3 to 8 GPa and the temperature of 1300 to 1500 DEG C to obtain the Ba3NbTe5 material. The Ba3NbTe5 material disclosed by the invention shows a very good one-dimensional conductive chain characteristic, and is a potential semiconductor material.

Description

technical field [0001] The invention belongs to the field of materials, in particular to a one-dimensional conductive chain semiconductor material Ba 3 NbTe 5 And its preparation method and application. Background technique [0002] The quasi-one-dimensional system has attracted much attention because of its unique structure, which exhibits novel physical properties such as quantum phase transition, unconventional superconductivity, and Bose-Einstein condensate. It has always been a hot topic of research. In addition, one-dimensional systems have relatively simple models, and the study of one-dimensional systems helps us understand the physical nature of higher dimensions. For one-dimensional conductive chain materials, due to the limitation of dimensions, the movement of electrons can only move in two directions, front and back, and then exhibit collective oscillation behavior, so it cannot be described by Fermi liquid theory, but by Luttinger liquid theory describe. Be...

Claims

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Application Information

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IPC IPC(8): C04B35/547C04B35/622C04B35/626C04B35/645
CPCC04B35/547C04B35/622C04B35/62675C04B35/6268C04B35/645C04B2235/401C04B2235/404C04B2235/42C04B2235/602C04B2235/656C04B2235/6567
Inventor 段磊
Owner HENAN UNIVERSITY OF TECHNOLOGY