Magnetron sputtering cathode target for preparing nanoclusters

Abstract

The invention discloses a magnetron sputtering cathode target for preparing nanoclusters, which comprises a connecting rod, a target head and a target cover, magnetic steel is arranged at one end of the connecting rod, the target head is sleeved with the target cover in a sealed mode, a cavity is formed in the target head, a cathode sputtering plate is fixed to the end of the target head, and the cathode sputtering plate is exposed when the target cover and the target head are fixed in a sealed mode; and a plurality of nozzles communicating with the target cover are annularly formed in the target cover, an air inlet connector is formed in the target head, and an air uniformizing mechanism communicating with the air inlet connector is arranged in the target head. The air homogenizing mechanism arranged in the target head can uniformly disperse introduced helium into the target head. The plurality of nozzles annularly arranged on the target cover ensure that the helium can be sprayed out from all directions of the target cover, so that sputtered argon ions can move towards the direction of a sample substrate as much as possible, and the film coating speed is ensured.

Description

technical field [0001] The invention relates to the technical field of sputtering coating, more specifically, to a magnetron sputtering cathode target for preparing nano-clusters Background technique [0002] Magnetron sputtering is a type of physical vapor deposition (Physical Vapor Deposition, PVD). The general sputtering method can be used to prepare multiple materials such as metals, semiconductors, and insulators, and has the advantages of simple equipment, easy control, large coating area and strong adhesion. Magnetron sputtering is a collision process of incident particles and a target. The incident particle undergoes a complex scattering process in the target, collides with the target atom, and transfers part of the momentum to the target atom, and the target atom collides with other target atoms to form a cascade process. During this cascade process some of the target atoms near the surface gain enough momentum to move outwards and are sputtered away from the targ...

AI Technical Summary

Problems solved by technology

Because the sputtered ions fly in all directions, they cannot accurately fly to the sample substrate, which will lead to a decrease in the coating rate

At the same time, the position of the existing sputtering target cannot be adjusted. When coating different sample substrates, due to the difference in the position of the sample substrate, it is often impossible to align the target head with the sample substrate, resulting in low coating rate, Uneven coating

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