Device for improving POLY-SI chemical vapor deposition and using method of device
A POLY-SI, chemical vapor deposition technology, applied in the direction of gaseous chemical plating, coating, metal material coating process, etc., can solve the problems of poor uniformity between sheets, easy clogging of the guide tube, clogging of the guide tube, etc.
Inactive Publication Date: 2021-09-10
MCL ELECTRONICS MATERIALS
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Problems solved by technology
During the POLY-SI thin film growth process on the conventional horizontal furnace, the silane gas intake is controlled by a single guide tube. Because the diameter of the guide tube is small, after a period of operation, the production of polysilicon due to the decomposition of silane in the guide tube will block the guide tube. , which in turn causes poor uniformity between sheets of the product and scraps the draft tube
[0003] On the horizontal LPCVD furnace, usually only one SIH4 flowmeter and one guide tube are used to control the flow rate. The distance between the guide tube and the paddle or boat is relatively close, and the diameter of the guide tube is usually small. In this process, The drain tube is easily blocked
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[0021] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments, but the present invention is not limited to the scope of the described embodiments.
[0022] A device for improving POLY-SI chemical vapor deposition, the device includes a reaction chamber 1, a guide tube assembly, a connecting pipe 3, a flow meter 5 and a vacuum mechanism, the reaction chamber 1 is a constant temperature reaction chamber 1, and one end of the guide tube assembly Set in the reaction chamber 1, the other end of the guide tube assembly passes through the reaction chamber 1 and communicates with the connecting pipe 3. The guide tube assembly includes the guide tube I2 and the guide tube II 202. The guide tube I is set in the guide tube Above the tube II, one end of the guide tube I is set in the reaction chamber 1, the other end of the guide tube I2 passes through the reaction chamber 1 and communicates with the connecting...
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The invention discloses a device for improving POLY-SI chemical vapor deposition. The device comprises a reaction cavity, a flow guide mechanism, a connecting pipe, a flow meter and a vacuum mechanism; the flow guide mechanism comprises a plurality of flow guide branch pipes, one end of each of the flow guide branch pipes is arranged in the reaction cavity, the other end of each of the flow guide branch pipes penetrate through the reaction cavity to communicate with the connecting pipe, the flow meter is arranged on the connecting pipe, a control valve is arranged between the connecting pipe and the flow meter, and the vacuum mechanism communicates with the reaction cavity. According to the device, the single flow guide pipe is changed into the flow guide pipe I and the flow guide pipe II, one flow meter is used for controlling the gas flow of the two flow guide pipes, and then the purpose of increasing the pipe diameter of the flow guide pipes is achieved, so that the blocking speed of the flow guide pipes is reduced, and the service life of the flow guide pipes is prolonged.
Description
technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to a device for improving POLY-SI chemical vapor deposition and an application method thereof. Background technique [0002] The polysilicon thin film process is often used for gettering of single crystal silicon wafers. During the growth process of polysilicon thin films, the reaction gas SIH4 used is transported to the surface of the silicon wafer through a guide tube. During the POLY-SI thin film growth process on the conventional horizontal furnace, the silane gas intake is controlled by a single guide tube. Because the diameter of the guide tube is small, after a period of operation, the production of polysilicon due to the decomposition of silane in the guide tube will block the guide tube. , which in turn causes poor uniformity between the sheets of the product and the draft tube is scrapped. [0003] On the horizontal LPCVD furnace, usually only one SIH4 fl...
Claims
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IPC IPC(8): C23C16/24C23C16/455C23C16/52
CPCC23C16/24C23C16/45561C23C16/52
Inventor 寇文辉胡晓亮陈伊林马兆硕苗利刚李战国
Owner MCL ELECTRONICS MATERIALS