Online monitoring method suitable for junction temperature and aging information of power semiconductor device

Abstract

The invention discloses an online monitoring method suitable for junction temperature and aging information of a power semiconductor device, relates to the technical field of power semiconductor devices, solves the problem that junction temperature of the power semiconductor device is difficult to extract, a conduction voltage drop Vce (on) measuring circuit and a gate drive circuit are integrated, and the conduction voltage drop Vce (on) and load current I are extracted in real time in an on-line manner, and the junction temperature information and the aging information of the IGBT can be extracted on line; the conduction voltage drop Vce (on) measurement circuit and the gate drive circuit are integrally designed so that junction temperature information and aging information are extracted under the condition that IGBT packaging is not damaged; by collecting the change condition of the conduction voltage drop Vce (on) under the same condition for a long time, the operation condition of the IGBT can be quantitatively analyzed, manual intervention is assisted, and the operation reliability of the device is improved.

Description

technical field [0001] The invention relates to the technical field of power semiconductor devices, in particular to an online monitoring method suitable for junction temperature and aging information of power semiconductor devices. Background technique [0002] Power electronics technology based on power semiconductor devices is playing an increasingly important role in high-reliability applications in industrial control fields such as rail transit energy feedback systems, high-voltage cascaded inverters, high-voltage SVGs, explosion-proof inverters, and energy storage systems. character of. However, with the wide application of power semiconductor devices such as IGBT and SiC MOSFET, and the improvement of power level, power density and dynamic response speed of power electronic devices, the reliability of power semiconductor devices seriously restricts the improvement of the overall reliability of the system. [0003] Taking the insulated gate bipolar transistor (Insulat...

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Problems solved by technology

[0005] The physical contact temperature measurement method has a slow detection response and cannot provide accurate real-time information; the optical temperature measurement method needs to open the package of the device under test, which destroys the package integrity of the device to a certain extent, and the cost of temperature measurement equipment is too high. The actual operation process is complicated; the thermal impedance model prediction method is only suitable for detecting the junction temperature of the device under normal operating conditions due to the slow heat conduction speed limiting the detection response speed

Since the chip of the power semiconductor device is wrapped inside the device by dielectric gel, it is difficult to quickly and accurately observe the IGBT junction temperature by using the above three temperature measurement methods without damaging the package.

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