Online monitoring method suitable for junction temperature and aging information of power semiconductor device

A power semiconductor and device technology, which is applied in the field of online monitoring of junction temperature and aging information of power semiconductor devices, can solve the problems of difficulty in fast and accurate observation of IGBT junction temperature, limited detection response speed, and high cost of temperature measurement equipment

Pending Publication Date: 2021-09-10
XINFENGGUANG ELECTRONICS TECH CO LTD
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Problems solved by technology

[0005] The physical contact temperature measurement method has a slow detection response and cannot provide accurate real-time information; the optical temperature measurement method needs to open the package of the device under test, which destroys the package integrity of the device to a certain extent, and the cost of temperature measurement equipment is too high. The actual operation process is complicated; the thermal impedance model predicti

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  • Online monitoring method suitable for junction temperature and aging information of power semiconductor device
  • Online monitoring method suitable for junction temperature and aging information of power semiconductor device
  • Online monitoring method suitable for junction temperature and aging information of power semiconductor device

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Embodiment Construction

[0023] In order to enable those skilled in the art to better understand the technical solution of the present invention, the present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0024] Taking IGBT as an example, the technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0025] Research results at home and abroad show that: IGBT conduction voltage drop V ce(on) is the load current I, the gate-emitter voltage V ge and junction temperature T j function, namely:

[0026]

[0027] Among them, V ce0 and R 0 Indicates the reference junction temperature T j0 The turn-on voltage drop and resistance at the time; ΔV ce0 and ΔR 0 Indicates the temperature coefficient of conduction voltage drop and resistance; α ge is the gate-emitter voltage difference ΔV ge proportionality factor.

[0028] When the gate-emitter voltage V ge and the l...

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Abstract

The invention discloses an online monitoring method suitable for junction temperature and aging information of a power semiconductor device, relates to the technical field of power semiconductor devices, solves the problem that junction temperature of the power semiconductor device is difficult to extract, a conduction voltage drop Vce (on) measuring circuit and a gate drive circuit are integrated, and the conduction voltage drop Vce (on) and load current I are extracted in real time in an on-line manner, and the junction temperature information and the aging information of the IGBT can be extracted on line; the conduction voltage drop Vce (on) measurement circuit and the gate drive circuit are integrally designed so that junction temperature information and aging information are extracted under the condition that IGBT packaging is not damaged; by collecting the change condition of the conduction voltage drop Vce (on) under the same condition for a long time, the operation condition of the IGBT can be quantitatively analyzed, manual intervention is assisted, and the operation reliability of the device is improved.

Description

technical field [0001] The invention relates to the technical field of power semiconductor devices, in particular to an online monitoring method suitable for junction temperature and aging information of power semiconductor devices. Background technique [0002] Power electronics technology based on power semiconductor devices is playing an increasingly important role in high-reliability applications in industrial control fields such as rail transit energy feedback systems, high-voltage cascaded inverters, high-voltage SVGs, explosion-proof inverters, and energy storage systems. character of. However, with the wide application of power semiconductor devices such as IGBT and SiC MOSFET, and the improvement of power level, power density and dynamic response speed of power electronic devices, the reliability of power semiconductor devices seriously restricts the improvement of the overall reliability of the system. [0003] Taking the insulated gate bipolar transistor (Insulat...

Claims

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Application Information

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IPC IPC(8): G01R31/26
CPCG01R31/2601G01R31/2608G01R31/2619G01R31/2642
Inventor 李锋魏继云王涛杨宾郑丹丹
Owner XINFENGGUANG ELECTRONICS TECH CO LTD
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