Three-dimensional memory and its preparation method
A memory, three-dimensional technology
Active Publication Date: 2022-03-25
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology
[0002] The wires on the source layer of the traditional three-dimensional memory cross the ground structure, the distance between the wires on the source layer and the ground structure is relatively short, the formation position of the ground structure is limited, and the size of the ground structure is also limited. This will affect the ability of the ground structure to drain the charge on the source layer, and the charge will easily break through the source layer, affecting the yield of the three-dimensional memory
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[0037] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
[0038] see figure 1 , figure 1 The invention provides a three-dimensional memory. In the present application, the projection of at least part of the ground structure 240 on the conductive layer 103 closest to the source layer 101 overlaps with the conductive layer 103, which makes at least part of the ground structure 240 and the leads on the source layer 101 to be misaligned, and the source layer The distance between the leads on 1...
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Abstract
The invention provides a three-dimensional memory and a preparation method thereof. The three-dimensional memory includes: a stacked first insulating layer, a source layer and a stacked structure, the source layer is located between the first insulating layer and the stacked structure, and the stacked structure includes alternately stacked conductive layers and interlayer insulating layers; several through the stacked The channel structure of the structure; the connection layer is located on the side of the first insulating layer away from the stack structure, and has a protrusion, and the protrusion passes through the first insulating layer and is electrically connected to the source layer; several ground structures are located on the source The layer faces away from the side of the stack structure, the grounding structure passes through the first insulating layer, and the two ends are respectively electrically connected to the source layer and the connection layer; the projection and conduction of at least part of the grounding structure on the conductive layer closest to the source layer Layers overlap. The grounding structure of the present invention can be set as required to enhance the ability to discharge charges on the source layer, which can reduce the risk of charges breaking through the source layer and improve the yield rate of the three-dimensional memory.
Description
technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a three-dimensional memory and a preparation method thereof. Background technique [0002] The leads on the source layer of the traditional three-dimensional memory and the grounding structure are arranged intersecting, and the distance between the leads on the source layer and the grounding structure is relatively close, the formation position of the grounding structure is limited, and the size of the grounding structure is also limited. This will affect the ability of the ground structure to discharge the charge on the source layer, and the charge will easily break down the source layer, thereby affecting the yield of the three-dimensional memory. SUMMARY OF THE INVENTION [0003] The purpose of the present invention is to provide a three-dimensional memory and a preparation method thereof, so as to solve the problem that the formation position of the ground str...
Claims
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IPC IPC(8): H01L27/11575H01L27/11582H01L23/528H01L21/768H10B43/50H10B43/27
CPCH01L23/5283H01L23/5286H01L21/76838H10B43/50H10B43/27
Inventor 陈赫肖亮伍术黄磊穆钰平
Owner YANGTZE MEMORY TECH CO LTD