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A solar-blind UV detector based on graphene amorphous gallium oxide thin films
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An ultraviolet detector and graphene technology, applied in the field of photoelectric detection, can solve the problems of complex Schottky structure fabrication process, slow response speed of MSM structure, large dark current of photoconductive structure, etc., and achieve large-area low-temperature growth, increase Effective light area, the effect of improving photoelectric performance
Active Publication Date: 2022-07-22
金华紫芯科技有限公司
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However, the manufacturing process of the Schottky structure of the gallium oxide-based ultraviolet detector is relatively complicated, which increases the production cost; although the manufacturing process of the photoconductive structure and the MSM structure is relatively simple, the dark current of the photoconductive structure is large and the response sensitivity is low; the MSM structure then the response speed is slow
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[0038] The present invention also provides a method for preparing a solar-blind ultraviolet detector of the graphene amorphous gallium oxide film, comprising the following preparation steps:
[0039] Step 1, select polyimide (PI) film 2 as the substrate, cut and clean;
[0040] In step 2, the polyimide (PI) film 2 is converted into a laser-induced graphene (LIG) electrode 4, and the graphene (LIG) electrode 4 is prepared by irradiating a laser with a focal plane so that the substrate is laser-induced; using The laser irradiates the pre-designed electrode area for many times, wherein the electrode area is located in the focal plane of the laser; the selected laser wavelength should be 355nm in the ultraviolet band, the laser pulse frequency should be 50-150KHz, and the laser pulse width should be 0.1-10 microns second. The laser-induced graphene (LIG) electrode 4 is in the shape of interdigitated fingers, the number of electrode pairs is 6-20, and the width between fingers is 50...
preparation Embodiment 1
[0044] Specifically, take a piece of polyimide (PI) film 2 with a size of 50mm×50mm×0.12mm, rinse the substrate with acetone, ethanol, and deionized water for 10 minutes in sequence, take it out and then rinse with deionized water, and finally Blow dry with dry air and set aside.
[0045] Place the cleaned polyimide (PI) film 2 substrate on the focal plane of the UV marking machine, design the electrode structure, adjust the parameters of the UV marking machine as follows, the frequency is 120 Hz, the Q pulse width is 1 microsecond, At a speed of 40 mm / s, graphene with a thickness of 30 μm was induced on the substrate polyimide (PI) film 2 as the electrode material. The laser-induced graphene (LIG) electrode 4 was interdigitated, and the number of electrode pairs was 6. Yes, the inter-finger width is 300µm.
[0046] The polyimide (PI) film 2 that forms the graphene (LIG) electrode 4 is put into the deposition chamber, and the amorphous gallium oxide (GaO) film 3 is grown at r...
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Abstract
The invention discloses a solar-blind ultraviolet detector of a graphene amorphous gallium oxide film and a preparation method thereof, which can realize effective detection of solar-blind ultraviolet light with a wavelength less than 280 nm, and are widely used in sterilization and disinfection ultraviolet monitoring, high-voltage arc ultraviolet Monitoring and electrical fire UV monitoring and other fields. The detector uses a polyimide film as a substrate, and a graphene electrode is prepared in situ on the substrate by laser induction, and then an amorphous gallium oxide film is deposited on the graphene electrode by a magnetron sputtering method as a photodetector. Finally, the substrate is integrated on the PCB circuit board, wherein the graphene electrode is embedded in the polyimide film substrate, which is closely combined with the substrate; the amorphous gallium oxide film is located above the graphene electrode, and the shape of the graphene electrode is It can be arbitrarily designed and generated in-situ by laser induction, without the need for complex processes such as masks, lithography, etching, etc., the process is simple, the cost is low, and it is suitable for mass production.
Description
technical field [0001] The invention relates to a solar-blind ultraviolet detector of a graphene amorphous gallium oxide thin film, which belongs to the technical field of photoelectric detection. Background technique [0002] Solar blind ultraviolet light usually refers to electromagnetic radiation in the wavelength range of 240-280 nm. Due to the strong absorption of the solar-blind ultraviolet band by the ozone layer, the ultraviolet light in this band reaching the near surface is very weak, which provides a natural low background window for the detection of the solar-blind ultraviolet signal. Solar-blind ultraviolet detectors refer to ultraviolet detectors that have obvious light response to the solar-blind ultraviolet band. Solar-blind UV detectors have high signal-to-noise ratio and low false alarm rate, and have significant advantages in detecting weak signals. In recent years, ultraviolet detectors have attracted much attention due to their significant application ...
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