A kind of texturing additive suitable for monocrystalline silicon wafer and its application

A single crystal silicon wafer and additive technology, applied in the direction of single crystal growth, single crystal growth, sustainable manufacturing/processing, etc., can solve the problems of increased chemical alkali consumption, increased production cost, complex process flow, etc. The effect of production cost, consumption reduction and process simplification

Active Publication Date: 2022-04-01
CHANGZHOU SHICHUANG ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the existing texturizing additives are easy to increase the consumption of chemical alkali, and the process is complicated, which leads to an increase in production cost

Method used

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  • A kind of texturing additive suitable for monocrystalline silicon wafer and its application

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] The method for texturing a single crystal silicon wafer of the present invention includes the following specific steps:

[0032] (1) Preparation of texturing additives: 0.1% sodium lignosulfonate, 0.01% glycerol polyether, 0.3% hydroxyethyl-β-cyclodextrin, 0.5% 1,4-bis (2-Hydroxyethyl) piperazine was added to the balance of deionized water, and mixed evenly to prepare a texturing additive;

[0033] (2) Preparation of texturing liquid: prepare 0.4wt% sodium hydroxide aqueous solution in the texturing tank, add the texturing additive of step (1) into the sodium hydroxide aqueous solution in a mass ratio of 1:100 and mix evenly , to get the fluffing liquid;

[0034] (3) Texturing: immerse the monocrystalline silicon wafer in the texturing solution obtained in step (2) for surface texturing, the texturing temperature is 83°C, and the texturing time is 7 minutes;

[0035] (4) Cleaning: The single-crystal silicon wafers textured in step (3) were washed with water and then i...

Embodiment 2

[0038] The method for texturing a single crystal silicon wafer of the present invention includes the following specific steps:

[0039] (1) Preparation of texturing additives: 0.2% sodium lignosulfonate, 0.02% glycerol polyether, 0.6% hydroxyethyl-β-cyclodextrin, 1.5% N-(2- Hydroxyethyl) piperazine is added to the balance of deionized water, and mixed evenly to prepare a texturing additive;

[0040] (2) Preparation of texturing liquid: prepare 0.7wt% sodium hydroxide aqueous solution in the texturing tank, add the texturing additive of step (1) into the sodium hydroxide aqueous solution in a mass ratio of 0.8:100 and mix evenly , to get the fluffing liquid;

[0041] (3) Texturing: immerse the monocrystalline silicon wafer in the texturing solution obtained in step (2) for surface texturing, the texturing temperature is 83°C, and the texturing time is 7 minutes;

[0042] (4) Cleaning: The single-crystal silicon wafers textured in step (3) were washed with water and then immer...

Embodiment 3

[0044] The method for texturing a single crystal silicon wafer of the present invention includes the following specific steps:

[0045] (1) Preparation of texturing additives: 0.1% sodium lignosulfonate, 0.01% sorbitol polyether, 0.5% carboxymethyl-β-cyclodextrin, 0.8% 1,4- Bis(2-hydroxyethyl)piperazine was added to the balance of deionized water, and mixed evenly to prepare a texturing additive;

[0046] (2) Preparation of texturing liquid: prepare 0.3wt% sodium hydroxide aqueous solution in the texturing tank, add the texturing additive of step (1) into the sodium hydroxide aqueous solution in a mass ratio of 0.8:100 and mix evenly , to get the fluffing liquid;

[0047] (3) Texturing: immerse the monocrystalline silicon wafer in the texturing solution obtained in step (2) for surface texturing, the texturing temperature is 83°C, and the texturing time is 7 minutes;

[0048] (4) Cleaning: The single-crystal silicon wafers textured in step (3) were washed with water and then i...

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Abstract

The invention discloses a texturing additive suitable for monocrystalline silicon wafers and its application. The texturing additive is composed of the following components in mass percent: 0.01-1 wt% of a main nucleating agent, 0.001-0.1 wt% of an auxiliary nucleating agent wt%, suede modifier 0.1~2wt%, defoaming agent 0.1~3wt%, the balance is deionized water. The texturizing additive of the invention reduces the consumption of inorganic alkali, and does not need to be washed with hydrogen peroxide after texturing, greatly reduces the consumption of chemicals, simplifies the technological process, and finally reduces the production cost of solar cells.

Description

technical field [0001] The invention relates to the technical field of solar cell production, in particular to a texturing additive suitable for monocrystalline silicon wafers and its application. Background technique [0002] The texturing process of solar cell production is to form a textured surface on the surface of the silicon wafer to create light traps and increase the absorption of sunlight by the silicon wafer. The texturing of single crystal silicon wafers is based on the differential corrosion between different crystal planes of silicon wafers in alkaline solution, forming a pyramid structure on the surface of silicon wafers, but only in alkaline solution, differential corrosion is not easy to reflect, and pyramid texture cannot be formed. The effect of the texturing additive is to further amplify the differential corrosion between the crystal planes, thereby forming a pyramid textured surface on the surface of the silicon wafer. At present, in order to improve t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/10C30B29/06H01L31/18
CPCC30B33/10C30B29/06H01L31/1804Y02P70/50Y02E10/547
Inventor 丁俊勇李海周树伟张丽娟陈培良
Owner CHANGZHOU SHICHUANG ENERGY CO LTD
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