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Device system for preparing single-layer graphene, single-layer graphene and preparation method of single-layer graphene

A single-layer graphene and graphene technology, applied in the field of graphene, can solve the problems of high cost, increase environmental risks, increase the difficulty of single-layer graphene preparation and subsequent processing and use, and achieve the effect of high production efficiency

Active Publication Date: 2021-09-28
INST OF URBAN ENVIRONMENT CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the commonly used chemical reducing agent reduction method usually uses a large amount of chemical reagents, the post-processing of the product is difficult and increases the environmental risk and the difficulty of wastewater treatment. The obtained graphene products often need to be further freeze-dried to obtain graphene powder, which is time-consuming and expensive. high cost
The process of liquid-phase reduction of graphene oxide is very prone to stacking and agglomeration of graphene nanosheets, and the prepared graphene monolayer rate is low, which increases the difficulty of preparing single-layer graphene and the difficulty of subsequent processing and use, and reduces the efficiency of graphene. functional advantages

Method used

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  • Device system for preparing single-layer graphene, single-layer graphene and preparation method of single-layer graphene
  • Device system for preparing single-layer graphene, single-layer graphene and preparation method of single-layer graphene

Examples

Experimental program
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Effect test

Embodiment 1

[0054] This embodiment provides a device system for preparing single-layer graphene, such as figure 1 As shown, the device system includes a sequentially connected preheating device 1, an atomizing device 2, a flash drying unit 3 and a flash peeling unit 4; the flash drying unit 3 includes a sequentially connected flash drying device 5 and The first gas-solid separation device 6; the flash stripping unit 4 includes a flash stripping device 7 and a second gas-solid separation device 8 connected in sequence.

[0055] In this embodiment, the flash drying device 5 is connected to the atomization device 2; the gas outlet of the first gas-solid separation device 6 is connected to the preheating device 1, and the discharge port is connected to the flash stripping device 7; The gas outlets of the second gas-solid separation device 8 are independently connected to the flash drying device 5 and the flash stripping device 7 .

[0056] In the present embodiment, the preheating device 1 i...

Embodiment 2

[0058] This embodiment provides a device system for preparing single-layer graphene, such as figure 2 As shown, the device system includes a sequentially connected preheating device 1, an atomizing device 2, a flash drying unit 3 and a flash peeling unit 4; the flash drying unit 3 includes a sequentially connected flash drying device 5 and The first gas-solid separation device 6; the flash stripping unit 4 includes a flash stripping device 7 and a second gas-solid separation device 8 connected in sequence.

[0059] In this embodiment, the flash drying device 5 is connected to the atomization device 2; the gas outlet of the first gas-solid separation device 6 is connected to the preheating device 1, and the discharge port is connected to the flash stripping device 7; The gas outlets of the second gas-solid separation device 8 are independently connected to the flash drying device 5 and the flash stripping device 7 .

[0060] In the present embodiment, the preheating device 1 ...

Embodiment 3

[0062] This embodiment provides a device system for preparing single-layer graphene. In the device system, except that the atomization device 2 is changed to an ultrasonic atomizer, all other conditions are the same as those in Embodiment 1, so details will not be repeated here. .

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Abstract

The invention provides a device system for preparing single-layer graphene, the single-layer graphene and a preparation method of the single-layer graphene. The device system comprises a preheating device, an atomization device, a flash drying unit and a flash heat stripping unit which are sequentially connected, the flash drying unit comprises a flash drying device and a first gas-solid separation device which are connected in sequence; the flash heat stripping unit comprises a flash heat stripping device and a second gas-solid separation device which are connected in sequence; the flash drying device is connected with the atomization device; a discharge hole of the first gas-solid separation device is connected with the flash heat stripping device; and a gas outlet of the second gas-solid separation device is independently connected with the flash drying device and the flash heat stripping device respectively. The preparation method comprises the steps of preheating, atomization, flash evaporation drying and flash heat stripping which are carried out in sequence. According to the preparation method provided by the invention, the stacking and agglomeration phenomena of graphene are inhibited, large-scale and continuous production is realized, and single-layer graphene is directly obtained.

Description

technical field [0001] The invention belongs to the technical field of graphene and relates to a single-layer graphene, in particular to a device system for preparing single-layer graphene, single-layer graphene and a preparation method thereof. Background technique [0002] The single-atom-thick two-dimensional honeycomb lattice structure graphene has excellent optical, electrical, mechanical properties and ultra-high theoretical specific surface area, and has great potential in the fields of environmental functional materials, energy storage materials, catalysts, sensors, composite materials, etc. application potential. At present, the preparation methods of graphene include mechanical exfoliation method, electrochemical exfoliation method, liquid phase exfoliation method, chemical vapor deposition method, epitaxial growth method, chemical redox method and so on. [0003] Among them, the mechanical exfoliation method can obtain single-layer high-quality graphene, but it t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/184
CPCC01B32/184C01B2204/02
Inventor 赖登国许新海汪印
Owner INST OF URBAN ENVIRONMENT CHINESE ACAD OF SCI
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