A superlattice layer, LED epitaxial structure, display device and manufacturing method thereof

Abstract

The present invention relates to the technical field of light-emitting diodes, and in particular to a superlattice structure, an LED epitaxial structure, a display device and a production method thereof. Each lattice unit includes a first n-type GaN layer, a second n-type GaN layer, a first n-type GaInN layer, and a second n-type GaInN layer that are sequentially grown in stack; wherein, the doping of the first n-type GaN layer along the growth direction The impurity concentration is fixed, the doping concentration of the second n-type GaN layer along the growth direction gradually increases, the doping concentration of the first n-type GaInN layer along the growth direction gradually decreases, and the doping concentration of the second n-type GaInN layer along the growth direction The concentration is fixed; the stress in the epitaxial structure of the present invention can be effectively released during the production process, so it can reduce the dislocation between the n-type GaN layer and the substrate caused by the stress, and effectively ensure the light emission of the LED performance.

Description

technical field [0001] The present invention relates to the technical field of light-emitting diodes, in particular to a superlattice layer, an LED epitaxial structure with the superlattice layer, a display device with the LED epitaxial structure, and a method for the superlattice layer. A production method and a method for manufacturing the LED epitaxial structure. Background technique [0002] With the development of science and technology, light-emitting diodes (Light Emitting Diode, LED) are widely used due to their good stability, lifespan, low power consumption, color saturation, fast response, and strong contrast. used in display devices. Existing LED chips all contain LED epitaxial structure, and LED epitaxial structure refers to a specific single crystal thin film grown on a substrate heated to an appropriate temperature. The substrate material of LED epitaxial structure is the cornerstone of the development of LED technology; the substrate material determines the...

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Problems solved by technology

[0003] The existing blue LED epitaxial structure is mainly to sequentially grow gallium nitride (GaN) buffer layer, non-doped gallium nitride layer, n-type doped gallium nitride layer and other structures on the sapphire substrate, and make LED devices; but Because there is a large lattice mismatch between gallium nitride and sapphire; wherein, the lattice mismatch refers to the mismatch phenomenon caused by the difference in lattice constant between the substrate and the epitaxial layer; and in the existing LED During the growth process of the epitaxial structure, the n-type doped gallium nitride layer is generated at one time, so the stress generated during the growth is relatively large, so that the n-type doped gallium nitride layer will occur under the action of stress. Displacement, resulting in a large dislocation between the n-type doped GaN layer and the substrate, and its threading dislocation will reach the multiple quantum well (multiplequantum well, MQW) region to form a V-type defect, thereby affecting its luminescence characteristic

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