Light-emitting device and preparation method thereof

Abstract

A light-emitting device provided by the present application includes a base substrate and a first semiconductor layer, a light-emitting layer and a second semiconductor layer stacked on the base substrate. The light-emitting layer includes periodically overlapping light-emitting units, the light-emitting unit includes an indium-containing quantum well layer, a quantum barrier layer and an indium-containing insertion layer, the indium-containing insertion layer is sandwiched between the indium-containing quantum well layer and the quantum barrier layer, and the indium-containing insertion layer is The content of indium element in the insertion layer is greater than the content of indium element in the indium-containing quantum well layer. In the present invention, by designing the structure of the light-emitting layer, adding an indium-containing insertion layer with a composition ratio of indium in the light-emitting unit, the strong polarization electric field in the light-emitting unit is relieved, and the polarization electric field in the light-emitting layer is thereby reduced. Influence, increase the wave function overlap of electron holes, improve the radiative recombination efficiency of carriers, and then can improve the luminous efficiency of the light-emitting device.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a light-emitting device and a preparation method thereof. Background technique [0002] Indium gallium nitride multiple quantum wells have achieved great success as high-efficiency active regions in light-emitting diodes (LEDs) and laser diodes (Laser Diodes). And a light-emitting diode is a semiconductor electronic device that converts electrical energy into light energy. When a current passes through the light-emitting diode, the electrons and holes inside the light-emitting diode recombine in its light-emitting layer to emit monochromatic light. [0003] However, due to the existence of a spontaneous polarization (Spontaneous polarization) electric field in the first semiconductor layer grown on the substrate in the light emitting diode, a lattice mismatch will be formed between the light emitting layer and the first semiconductor layer to form a piezoelectric ...

AI Technical Summary

Problems solved by technology

The existence of the polarization electric field will make the energy band of the light-emitting layer tilt, the electron and hole wave functions will overlap in space, and the probability of radiative recombination will decrease, so that the quantum efficiency in the light-emitting diode will decrease. At the same time, due to the existence of the polarization electric field , when the current changes, the peak wavelength will shift, which will cause the display color difference

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