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LED epitaxial structure, manufacturing method thereof, light-emitting device and display panel

A technology of epitaxial structure and manufacturing method, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problem of low luminous efficiency of LED, and achieve the effect of improving light conversion efficiency, alleviating low luminous efficiency, and good wavelength uniformity.

Pending Publication Date: 2021-09-28
CHONGQING KONKA PHOTOELECTRIC TECH RES INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above deficiencies in the prior art, the purpose of this application is to provide an LED epitaxial structure, its manufacturing method, light emitting device and display panel, aiming to solve the problem of low luminous efficiency of LED in the prior art

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  • LED epitaxial structure, manufacturing method thereof, light-emitting device and display panel

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Embodiment Construction

[0031] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Preferred embodiments of the application are shown in the accompanying drawings. However, the present application can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the application more thorough and comprehensive.

[0032] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terminology used herein in the description of the application is only for the purpose of describing specific embodiments, and is not intended to limit the application.

[0033] In the prior art, there is a problem that the luminous efficiency of the L...

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Abstract

The invention relates to an LED epitaxial structure, a manufacturing method thereof, a light-emitting device and a display panel. The LED epitaxial structure comprises a substrate, an N-type limiting layer, an active layer and a P-type limiting layer which are sequentially arranged from bottom to top, the active layer comprises quantum well layers and quantum barrier layers which are alternately arranged, part of the quantum barrier layers are first quantum barrier layers, part of the quantum barrier layers are second quantum barrier layers, the second quantum barrier layers are located between the two first quantum barrier layers, and the thickness of any second quantum barrier layer is larger than that of any first quantum barrier layer. According to the LED epitaxial structure, the problem that the luminous efficiency of an existing LED is not high is well solved.

Description

technical field [0001] The invention relates to the display field, in particular to an LED epitaxial structure, a manufacturing method thereof, a light emitting device and a display panel. Background technique [0002] With the maturity of MOCVD (Metal-Organic Chemical Vapor Deposition, metal-organic compound chemical vapor deposition) technology, high-quality lattice-matched AlGaInP quantum well epitaxial layers can be prepared on GaAs substrates. AlGaInP materials have direct transition characteristics. Composite luminous efficiency is high. The forbidden band width can be adjusted with the change of the Al composition to realize high-brightness light emission of LED (Light Emitting Diode, light-emitting diode) in an ultra-wide wavelength range of 560nm-650nm from red light to blue-green light. [0003] At present, the light extraction efficiency and light conversion efficiency mainly affect the LED luminous efficiency, such as the absorption of light by the GaAs substrat...

Claims

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Application Information

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IPC IPC(8): H01L33/06H01L33/14H01L33/30H01L33/00
CPCH01L33/06H01L33/14H01L33/30H01L33/0062
Inventor 张海林林雅雯黄国栋翟小林黎力
Owner CHONGQING KONKA PHOTOELECTRIC TECH RES INST CO LTD