Ion screen for improving uniformity of plasma ashing process

Abstract

The invention discloses an ion screen for improving the uniformity of a plasma ashing process, which comprises a screen body, and a convex area is arranged in the middle of the screen body. Compared with the prior art, theion scree has the advantages that by redesigning the mechanical shape of the ion screen, the uniformity is improved, and the photoresist removing rate of the center of the wafer is controlled; and meanwhile, the ion screen can be assembled by turning over by 180 degrees, and is suitable for occasions where the photoresist removing speed of the center of the wafer is low originally, so that the process is easier to adjust.

Description

technical field [0001] The invention relates to an ion screen, in particular to an ion screen for improving the uniformity of a plasma ashing process. Background technique [0002] In the wafer manufacturing process, plasma ashing is an indispensable pass in the entire production process. This process is usually used for photoresist removal after dry etching; using the plasma ashing reaction chamber, it can realize The removal of the photoresist or the modification of the morphology of the photoresist, so as to achieve better process control and stability. [0003] With the continuous reduction of critical dimensions in the wafer manufacturing process, the requirements for the stability of the plasma ashing process and the uniformity of the wafer after the process is completed are getting higher and higher. Generally, the uniformity is required to be less than 5%. As an important part of the plasma ashing equipment, the ion screen can not only filter the charged ions in th...

AI Technical Summary

Problems solved by technology

However, for a well-designed commercial ashing reaction chamber, under extreme process conditions, parameters such as power, air pressure, and gas flow are already at the limit state, and it is difficult to achieve uniform sexual enhancement

Images