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On-chip triode, manufacturing method thereof and integrated circuit

A technology of integrated circuits and triodes, applied in circuits, transistors, electrical components, etc., can solve the problems of large size, high cost, and high power consumption, and achieve the effects of reducing power consumption, reducing size, and improving integration

Pending Publication Date: 2021-10-26
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The various components in the current triode are obtained by mechanical processing, the size is large, the power consumption is high, and the cost is also high, which cannot meet the actual needs

Method used

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  • On-chip triode, manufacturing method thereof and integrated circuit
  • On-chip triode, manufacturing method thereof and integrated circuit
  • On-chip triode, manufacturing method thereof and integrated circuit

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Embodiment Construction

[0071] The triode is an important component in an electronic device, including a cathode, an anode and a gate, where the cathode can emit electrons, and the gate controls the proportion of electrons passing through the gate by changing the electric field between the cathode and the gate, partly through the gate The electrons are received by the anode to which a positive voltage is applied, thus enabling regulation of the current flow between the cathode and anode through the grid.

[0072] At present, each component in the triode is obtained by machining, which has large size, high power consumption, and high cost, so it cannot meet actual needs.

[0073] Based on the above technical problems, embodiments of the present application provide an on-chip triode and its manufacturing method, and an integrated circuit, wherein the on-chip triode may include an electron source on a substrate, a gate layer above the electron source, and an anode layer above the gate layer , wherein, t...

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PUM

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Abstract

The embodiment of the invention provides an on-chip triode and a manufacturing method thereof, and an integrated circuit. The on-chip triode can comprise an electron source on a substrate, a gate layer above the electron source, and an anode layer above the gate layer, the gate layer is provided with a gate channel which can directly face the electron source, and the gate channel longitudinally penetrates through the gate layer. In this way, electrons generated by the electron source can be emitted to the anode layer through the gate channel, and the number of electrons passing through the gate channel can be controlled by controlling the voltage of the gate layer. As the on-chip triode has the on-chip characteristic, the on-chip triode can be prepared by adopting a micromachining method, the size of the triode is reduced, the power consumption is reduced, the integration level is improved, and the cost is reduced.

Description

technical field [0001] The present application relates to the field of electronic science and technology, in particular to an on-chip triode, a manufacturing method thereof, and an integrated circuit. Background technique [0002] The triode is an important component in electronic devices, including a cathode, an anode and a grid. The cathode can emit electrons, and the electric field between the cathode and the grid can be changed through the grid to control the proportion of electrons passing through the grid. Part of the electrons passing through the grid Electrons can be picked up by the anode to which a positive voltage is applied, thus regulating the current flow between the cathode and anode through the grid. [0003] Each component in the current triode is obtained by machining, which has large size, high power consumption, and high cost, which cannot meet actual needs. Contents of the invention [0004] In view of this, the present application provides an on-chip...

Claims

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Application Information

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IPC IPC(8): H01L29/80H01L29/808H01L27/06
CPCH01L29/80H01L29/8083H01L27/0617
Inventor 魏贤龙杨威
Owner PEKING UNIV