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Method for manufacturing semiconductor device

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., can solve problems such as increasing the complexity of semiconductor manufacturing processes

Pending Publication Date: 2021-11-02
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such miniaturization increases the complexity of the semiconductor process

Method used

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  • Method for manufacturing semiconductor device
  • Method for manufacturing semiconductor device
  • Method for manufacturing semiconductor device

Examples

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Embodiment Construction

[0052] The following disclosure provides many different embodiments, or examples, for implementing different elements of the presented subject matter. Specific examples of each element and its configuration are described below to simplify embodiments of the present invention. Of course, these are just examples, not intended to limit the embodiments of the present invention. For example, if it is mentioned in the description that the first component is formed on the second component, it may include an embodiment in which the first component and the second component are in direct contact, and may also include an additional component formed on the first component and the second component between them so that they are not in direct contact with each other. As used herein, forming a first feature on a second feature means forming the first feature to directly contact the second feature. In addition, the present disclosure may repeat element symbols and / or letters in various examp...

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Abstract

A method of manufacturing a semiconductor device is described. The manufacturing method of the semiconductor device comprises the following steps: forming a fin structure on a substrate; forming a polycrystalline silicon gate structure on the first part of the fin structure; forming an opening in a second portion of the fin structure, wherein the first portion and the second portion of the fin structure are adjacent to each other; transversely forming a notch on the side wall of the first part of the fin structure below the polycrystalline silicon gate structure; and forming an inner spacer structure in the recess. The inner spacer structure includes an inner air spacer enclosed by a first dielectric spacer layer and a second dielectric spacer layer.

Description

technical field [0001] Embodiments of the present invention relate to a semiconductor device and a manufacturing method thereof, in particular to a semiconductor device with a nanostructure and a manufacturing method thereof. Background technique [0002] With the advancement of semiconductor technology, the demand for higher storage capacity, faster processing system, higher performance and lower cost continues to grow. To meet these demands, the semiconductor industry continues to shrink the size of semiconductor devices such as metal oxide semiconductor field effect transistors (MOSFETs), which include planar metal oxide semiconductor field effect transistors and fin field effect transistors. Transistors (finFETs). Such miniaturization increases the complexity of the semiconductor manufacturing process. Contents of the invention [0003] An embodiment of the present invention provides a method for manufacturing a semiconductor device. The manufacturing method of the ...

Claims

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Application Information

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IPC IPC(8): H01L21/8234H01L21/8238H01L27/088H01L27/092
CPCH01L21/823481H01L21/823431H01L21/823878H01L21/823821H01L27/0886H01L27/0924H01L29/6656H01L29/66545H01L29/4991H01L29/775B82Y10/00H01L29/0673H01L29/42392H01L29/66439H01L29/0653H01L29/165H01L29/78696H01L29/785H01L29/66795H01L21/823468H01L21/823418H01L21/823425H01L29/6653H01L29/66553
Inventor 王振翰陈婷婷梁顺鑫上野哲嗣林耕竹
Owner TAIWAN SEMICON MFG CO LTD