Gallium nitride power device with high avalanche capability and production process thereof

Abstract

The invention discloses a gallium nitride power device with a high avalanche capability and a production process thereof. The device is characterized in that a gallium nitride buffer layer is arranged on a P-type silicon substrate, an aluminum-gallium-nitrogen barrier layer is arranged on the gallium nitride buffer layer, and then a metal source electrode, a metal drain electrode, a P-type gallium nitride layer and a metal grid electrode are arranged on the gallium nitride buffer layer; and an N-type region is arranged in the P-type silicon substrate, the metal drain electrode extends to penetrate through the aluminum-gallium-nitrogen barrier layer and the gallium nitride buffer layer and is connected to the N-type region, and a nitride passivation layer is arranged between the metal drain electrode and the gallium nitride buffer layer and is used for isolating the metal drain electrode from the gallium nitride buffer layer. The production process comprises the following steps of 1, forming an N-type region in a P-type silicon substrate; 2, growing the gallium nitride buffer layer on the P-type silicon substrate; 3, growing the aluminum-gallium-nitrogen barrier layer on the gallium nitride buffer layer; 4, forming a P-type gallium nitride layer on the aluminum gallium nitride barrier layer; 5, forming a nitride passivation layer; and 6, respectively depositing metal to form a metal source electrode, a metal drain electrode and a metal grid electrode.

Description

technical field [0001] The invention mainly relates to the technical field of power integrated circuits, and is suitable for many power control processes such as switching power supplies, motor control, automotive electronic systems, household appliances, etc., and particularly relates to a gallium nitride power device with high avalanche capability and its preparation process. Background technique [0002] Today's semiconductor industry has increasing requirements for power devices, mainly including high power density, low on-resistance, high reliability, high frequency, small size and strong radiation resistance. However, the performance of silicon-based power devices, mainly metal-oxide-semiconductor field-effect transistors and insulated-gate bipolar transistors, has approached the theoretical limit of their materials and cannot meet the higher requirements for power devices in the next generation of power electronic systems. The "silicon limit" is critical. GaN materia...

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Problems solved by technology

[0005] Aiming at the problem of poor avalanche capability of gallium nitride power devices, the present invention proposes a novel structure of gallium nitride power devices, which greatly improves the avalanche capability of gallium nitride power devices and improves the practical performance of the entire device structure

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