The invention relates to a parallel connection double-junction
solar cell. The parallel connection double-junction
solar cell comprises a
silicon slice, a deep junction and a
shallow junction are sequentially arranged on one side of the upper surface of the
silicon slice from inside to outside to form a P-N-P type or N-P-N type double-junction
cell,
doping elements of the
cell are diffused in a first
crystal silicon layer between the deep junction and the
shallow junction, the first
crystal silicon layer extends to a top
electrode area from inside to outside, the top
electrode area is a heavy
doping area, a second
crystal silicon layer with electrical properties opposite to those of the
doping elements is arranged above the
shallow junction, the second crystal silicon layer is located outside the top
electrode area on the upper surface of the silicon slice, a top electrode is in
ohmic contact with the first crystal silicon layer, a transoid electrode which is in
ohmic contact with the second crystal silicon layer is arranged on a non-top-electrode area, and the transoid electrode is connected with a back electrode. According to the parallel connection double-junction
solar cell, two PN junctions are formed in the same
monocrystalline silicon battery and share one p area, the difficulty of current carriers in a series connection laminated
cell to penetrate through a
tunnel junction is reduced, the absorption of
short waves is facilitated by the aid of the shallow junction, the absorption of long
waves is effectively guaranteed by the aid of the deep junction, and thereby performances of the cell are good.