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Metamaterial micro-bridge structure and preparation method thereof

A micro-bridge structure and meta-material technology, applied in the directions of micro-structure technology, micro-structure devices, manufacturing micro-structure devices, etc., can solve the problems of meta-material micro-bridge structure deformation, complex preparation process, etc. The effect of terahertz radiation absorptivity

Active Publication Date: 2018-08-03
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The purpose of the present invention is to solve the problems that the existing metamaterial microbridge structure is easy to deform and the preparation process is complicated, and at the same time further improve the thermal response rate of the device. The present invention provides a metamaterial microbridge structure and its preparation method

Method used

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  • Metamaterial micro-bridge structure and preparation method thereof
  • Metamaterial micro-bridge structure and preparation method thereof

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preparation example Construction

[0040] For the preparation method of the above-mentioned metamaterial microbridge structure, specifically, the following steps are included:

[0041] Step 1: grow a sacrificial layer on the substrate with the driving circuit layer 20 and pattern the sacrificial layer 30, the driving circuit layer 20 has a circuit interface 21; the material of the sacrificial layer 30 is polyimide, silicon dioxide, One of oxidized porous silicon or phosphosilicate glasses.

[0042] Step 2: Prepare an underlying metal film 40 with a thickness of 100-300 nm on the sacrificial layer 30 , and the underlying metal film 40 covers the top of the sacrificial layer 30 and part of the surface of the circuit interface 21 . The bottom metal thin film 40 is made of one or more of aluminum, tungsten, titanium, platinum, nickel, and chromium.

[0043] Step 3: Prepare an intermediate dielectric layer 50 with a thickness of 100-500 nm on the underlying metal film 40 to expose the circuit interface 21 . The ma...

Embodiment 1

[0051] Such as figure 1 with figure 2 Shown, a kind of preparation method of metamaterial microbridge structure, this microbridge structure is expanded on the substrate 10 that has prepared bottom driving circuit 20, and driving circuit 20 has flowed out of circuit interface 21, as figure 1 As shown in -a, the next steps are:

[0052] Step 1: Clean the surface of the substrate 10 to remove surface contamination, and bake the substrate 10 at 200°C to remove the moisture on the surface and enhance the bonding performance; use the automatic glue coating track to coat the sacrificial layer 30, Here, the material of the sacrificial layer 20 is photosensitive polyimide; the thickness of the polyimide film is adjusted by rotating speed, and the coated photosensitive polyimide is baked at 120°C to remove part of the solvent in the glue , which is conducive to the neatness of the exposure lines. The photosensitive polyimide is exposed by a NIKON lithography machine, and the exposed...

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Abstract

The invention provides a metamaterial micro-bridge structure, and relates to the technical field of terahertz detection array imaging at room temperature. The metamaterial micro-bridge structure comprises a substrate and a driving circuit layer, wherein a circuit interface is formed in the driving circuit layer; the metamaterial micro-bridge structure further comprises a bottom-layer metal thin film, a middle medium layer, an electrode layer, a thermosensitive thin film layer, a passivation layer and a top-layer metal thin film which are arranged from bottom to top in sequence; the middle medium layer comprises a deck, bridge legs and bridge masts; one part of the bottom-layer metal thin film is located below the deck, and the other part of the bottom-layer metal thin film is located belowthe bridge masts; a cavity is formed between the metal thin film located below the bridge deck and the driving circuit layer; the electrode layer is connected with the circuit interface; a sunken part is formed in the center of the electrode layer; and the bottom of the thermosensitive thin film layer is in contact with the middle medium layer through the sunken part. The metamaterial micro-bridge structure provided by the invention solves the problems that the existing metamaterial micro-bridge structure easily deforms and a preparation process is complicated; and meanwhile, the thermal response rate of a device is further increased.

Description

technical field [0001] The invention relates to the technical field of terahertz detection array imaging at room temperature, in particular to a metamaterial microbridge structure and a preparation method thereof. Background technique [0002] Terahertz (THz) waves refer to electromagnetic radiation with a frequency between 0.1-10 THz (wavelength 3 mm-30 μm), and its electromagnetic spectrum is between microwave and infrared bands. Therefore, terahertz systems take advantage of both electronics and optics. For a long time, due to the lack of effective terahertz radiation generation and detection methods, people's understanding of the properties of electromagnetic radiation in this band is very limited, so that this band is called the terahertz gap in the electromagnetic spectrum. This band is also the last frequency window in the electromagnetic spectrum to be fully studied. Compared with electromagnetic waves in other bands, terahertz electromagnetic waves have the follow...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B3/00B81C1/00
CPCB81B3/00B81B3/0035B81C1/00
Inventor 苟君牛青辰王军蒋亚东
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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