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Light emitting diode and manufacturing method therefor

A technology of light-emitting diodes and light-emitting layers, which is used in semiconductor devices, electrical components, circuits, etc.

Pending Publication Date: 2021-11-05
HCP TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, in the related quantum dot luminescence technology, whether it is photoluminescence or electroluminescence, it is difficult to avoid the influence of water vapor and oxygen on the performance and life of quantum dots.

Method used

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  • Light emitting diode and manufacturing method therefor
  • Light emitting diode and manufacturing method therefor
  • Light emitting diode and manufacturing method therefor

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Embodiment Construction

[0033] The embodiment of the present application provides a light emitting diode. figure 1 It is a schematic structural diagram of a light emitting diode provided by an embodiment of the present application. see figure 1 , the light emitting diode includes: a first type layer 101 , a light emitting layer, a second type layer 104 and an electrode layer 105 . The first type layer 101 includes first type gallium nitride; the light emitting layer is located on the first type layer 101; the light emitting layer includes quantum dots 1031; the second type layer 104 is located on the light emitting layer; the second type layer 104 includes the second type gallium nitride or indium tin oxide (IndiumTin Oxide, ITO); the electrode layer 105 is located on the second type layer 104 .

[0034] Wherein, the form of the first-type gallium nitride may be a first-type gallium nitride single crystal thin film or a first-type gallium nitride polycrystalline thin film. The quantum dot 1031 inc...

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Abstract

A light emitting diode and a manufacturing method therefor. The light emitting diode comprises a first-type layer (101), a light emitting layer, a second-type layer (104), and an electrode layer; the first-type layer (101) comprises first-type gallium nitride; the light emitting layer is located on the first-type layer (101); the light emitting layer comprises quantum dots (1031); the second-type layer (104) is located on the light emitting layer; the second-type layer (104) comprises second-type gallium nitride or indium tin oxide; the electrode layer (105) is located on the second-type layer (104).

Description

technical field [0001] The embodiments of the present application relate to the technical field of semiconductors, for example, a light emitting diode and a manufacturing method thereof. Background technique [0002] During the development of display technology, performance improvements in the following aspects have been pursued, such as large size, energy consumption, response speed, color gamut, resolution, brightness, and reliability. Among related display technologies, liquid crystal displays (Liquid Crystal Displays, LCDs) have advantages in size and have been popularized on a large scale. Organic light-emitting diodes (Organic Light-Emitting Diode, OLED) have been widely used in small-size displays, such as mobile phones and tablet computers, due to their advantages in energy consumption, color gamut and flexibility, but in large-scale displays, such as TVs, due to cost And reliability reasons have not been widely popularized. [0003] In the next generation of displ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/00
CPCH01L33/06H01L33/007H01L33/32H01L33/44H01L33/42H01L2933/0025H01L33/26H01L33/145H01L27/156H01L33/0093H01L33/0075H01L33/58
Inventor 庄文荣孙明付小朝卢敬权
Owner HCP TECH CO LTD