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A kind of SRAM reading and writing control method and row buffer controller

A technology for read-write control and line buffering, applied in the SOC field, can solve the problem of high dynamic power consumption, and achieve the effects of refined dynamic power consumption control, reduced power consumption, and reduced circuit scale

Active Publication Date: 2022-02-18
睿思芯科(深圳)技术有限公司
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

[0004] The embodiment of the present invention provides a SRAM read and write control method and a row buffer controller, aiming to solve the problem of high dynamic power consumption when the row buffer controller in the prior art performs reading and writing

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  • A kind of SRAM reading and writing control method and row buffer controller
  • A kind of SRAM reading and writing control method and row buffer controller
  • A kind of SRAM reading and writing control method and row buffer controller

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Embodiment Construction

[0040] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0041] Please refer to figure 2 , figure 2It is a schematic diagram of the SRAM read and write control method provided by the embodiment of the present invention. In the embodiment of the present invention, the line buffer controller is not integrated in the storage access controller, but dispersed in the structure of the SRAM Bank. Generally, the SRAM Including several Banks, the Bank is defined as the last structure before the memory grain in the computer composition, that is, the Bank structure divides the memory grain into block-type storage units with interleaved rows and columns. Correspon...

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Abstract

The present invention is applicable to the technical field of SOC, and provides a kind of SRAM reading and writing control method and row buffer controller, and described method comprises: setting access field and reading and writing strategy in strategy register; SRAM read and write addresses, and send data read and write instructions according to the SRAM read and write addresses; adjust the row replacement strategy according to the data read and write instructions through the row buffer register group, and read or / and write data according to the row replacement strategy operate. The invention reduces the dynamic power consumption generated in the process of reading and writing the SRAM through a new line buffer controller.

Description

technical field [0001] The invention belongs to the technical field of SOC, and in particular relates to an SRAM read-write control method and a row buffer controller. Background technique [0002] In a low-power embedded system-on-chip (System On Chip, SOC), read and write access operations of a static random-access memory (Static Random-Access Memory, SRAM) will cause relatively large dynamic power consumption. Please refer to figure 1 , in related research, the latest scheme on memory access power consumption control is to use the spatial locality and temporal locality of memory access to read row data in Dynamic Random Access Memory (DRAM) access Temporarily stored in a row buffer Cache (Row Buffer Cache) for specially caching row data, and the row buffer Cache, row buffer interference detector (Row buffer interference detector), row buffer locality predictor (Row buffer locality predictor), Fairness allocator and other related circuits are integrated into the memory c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F15/78
CPCG06F15/781Y02D10/00
Inventor 谭章熹梁松海崔鲁平
Owner 睿思芯科(深圳)技术有限公司
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