Wafer exposure method

Abstract

The invention provides a wafer exposure method. When the wafer is exposed, firstly, the alignment mark area on the glued wafer is exposed through the first mask plate, and the development operation is carried out on the alignment mark area, so that when the secondary exposure is carried out, the alignment mark in the alignment mark area on the wafer can be clearly exposed, and exposure operation is carried out at the moment, so that the wafer can be accurately positioned, and the photoetching precision is effectively improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor photolithography, in particular to a wafer exposure method. Background technique [0002] With the development of semiconductor technology, the density of integrated circuits is getting higher and higher, and the feature size is getting smaller and smaller. Among them, in the semiconductor process, photolithography and exposure processes play a pivotal role. In the manufacturing process of semiconductor devices, the patterning of various layers of thin films and ion implantation of semiconductors are defined by photolithography. The specific steps include: spin-coating photoresist on the surface of the wafer to form a layer of photolithography The photoresist layer is exposed and developed to transfer the pattern on the mask plate to the photoresist layer on the wafer surface. [0003] In the prior art, when a photolithography machine is used for exposure, alignment marks on the wafer need...

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Problems solved by technology

[0005] The purpose of the present invention is to at least solve one of the above-mentioned technical defects, especially in the prior art when the wafer is exposed after gluing, due to the interference and refraction of light, the recognition accuracy of the alignment mark on the wafer Low, which affects the alignment of the wafer, resulting in a technical defect that reduces the accuracy of lithography

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