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Forming a thin film resistor (TFR) in an integrated circuit device

A technology of thin film resistors and integrated circuits, applied in the direction of resistors, electric solid devices, circuits, etc., to achieve the effect of reducing costs

Pending Publication Date: 2021-11-30
MICROCHIP TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A common disadvantage of thin film resistors is that their fabrication often requires additional processing steps, including multiple additional masking steps

Method used

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  • Forming a thin film resistor (TFR) in an integrated circuit device
  • Forming a thin film resistor (TFR) in an integrated circuit device
  • Forming a thin film resistor (TFR) in an integrated circuit device

Examples

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Embodiment Construction

[0016] As described above, embodiments of the present invention provide improved techniques for integrating thin film resistors (TFRs) in semiconductor integrated circuit (IC) devices, which can reduce costs compared to conventional techniques. For example, some embodiments provide methods and systems for forming integrated TFRs using a single photomask process, as compared to conventional methods that require at least two mask processes.

[0017] A first aspect of the invention provides a method of forming an integrated circuit (IC) structure including a thin film resistor (TFR). The method may include: forming at least one IC component over a semiconductor substrate, the at least one IC component having at least one IC component contact region; forming a first contact etch stop layer over the at least one IC component; A stack of TFR layers is formed over the etch stop layer and is laterally offset from at least one IC component contact area. Forming the TFR layer stack may...

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PUM

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Abstract

A method is provided for forming a thin film resistor (TFR) in an integrated circuit (IC) including IC elements, e.g., memory components. A first contact etch stop layer is formed over the IC elements. A TFR layer stack including a TFR etch stop layer, a TFR film layer, and a second contact etch stop layer is formed over the first contact etch stop layer, and in some cases over one or more pre-metal dielectric layers. A patterned mask is formed over the IC stack, and the stack is etched, through both the first and second contact etch stop layers, to simultaneously form (a) first contact openings exposing contact regions of the IC elements and (b) second contact opening(s) exposing the TFR film layer. The first and second contact openings are filled with conductive material to form conductive contacts to the IC elements and the TFR film layer.

Description

[0001] priority [0002] This patent application claims priority to U.S. Provisional Patent Application No. 62 / 832,290, filed April 11, 2019, the contents of which are hereby incorporated herein in their entirety. technical field [0003] The present disclosure relates to thin film resistors (TFRs) and methods of forming thin film resistors, such as systems and methods for forming thin film resistors integrated in semiconductor integrated circuit (IC) devices. Background technique [0004] Many integrated circuit ("IC") devices incorporate thin film resistors (TFRs), which offer various advantages over other types of resistors. For example, TFRs can be highly accurate and can be trimmed to provide very precise resistance values. Furthermore, TFRs typically have a low temperature coefficient of resistance (TCR), such as after a suitable annealing process that "tunes" the TCR to a near-zero value, which provides stable operation over a wide range of operating temperatures. I...

Claims

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Application Information

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IPC IPC(8): H01L49/02H01L27/06
CPCH01L27/0629H01L28/20H01L23/5228H01L21/31144H01L21/76834H01L21/76895
Inventor P·费斯特
Owner MICROCHIP TECH INC