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Magnetron sputtering device

A technology of a magnetron sputtering device and a sputtering chamber, which is applied in the field of sputtering, can solve the problems of long operation time and subsequent recovery time, and limited adjustable range of magnet-target distance, so as to avoid adjustment time and subsequent recovery time. Too long, control the coating uniformity, the effect of uniform magnetic field

Pending Publication Date: 2021-12-03
北海惠科半导体科技有限公司
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Problems solved by technology

Among the many characteristics of the film, the uniformity is an important index to measure the quality of the film and the performance of the machine. The uniformity of the film is related to many factors, including gas uniformity, magnetic field uniformity, and target-base distance; by adjusting the magnet-target Changing the magnetic field distribution in the chamber can play a role in adjusting the uniformity of the coating, but the adjustable range of the magnet-target distance is limited, and the operation time and subsequent recovery time are long

Method used

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  • Magnetron sputtering device
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Embodiment Construction

[0021] It should be understood that the terminology and specific structural and functional details disclosed herein are representative only for describing specific embodiments, but the application can be embodied in many alternative forms and should not be construed as merely Be limited by the examples set forth herein.

[0022] In the description of the present application, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating relative importance, or implicitly indicating the quantity of indicated technical features. Therefore, unless otherwise specified, the features defined as "first" and "second" may explicitly or implicitly include one or more of these features; "plurality" means two or more. The term "comprising" and any variations thereof mean non-exclusive inclusion, possible presence or addition of one or more other features, integers, steps, operations, units, components and / or combinations thereof.

[0023] Al...

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Abstract

The invention discloses a magnetron sputtering device. The magnetron sputtering device comprises a sputtering cavity, a base station, a magnetic field adjusting device and a target material, the base station is arranged in the sputtering cavity and used for placing a substrate, the magnetic field adjusting device is arranged in the sputtering cavity and opposite to the base station, the target material is arranged between the base station and the magnetic field adjusting device, the magnetic field adjusting device comprises a first cavity, a first magnet structure and a second magnet structure, the first magnet structure comprises at least two fixed magnets and a magnet rotating structure, the polarities of one ends, close to the target material, of the two adjacent fixed magnets are opposite, the magnet rotating structure drives the fixed magnets to rotate, the second magnet structure is arranged outside the sputtering cavity and comprises a coil, and the coil is arranged around the first magnet structure. The second magnet structure can adjust the magnetic field distribution in the chamber without adjusting the distance between the original magnet and the target material so that the film coating is more uniform, the adjusting time is saved, and the adjustment outside the sputtering chamber is more convenient.

Description

technical field [0001] The present application relates to the field of sputtering technology, in particular to a magnetron sputtering device. Background technique [0002] Magnetron sputtering devices are widely used in the processing of integrated circuits. Magnetron sputtering coatings are based on two-pole DC sputtering and apply an orthogonal electromagnetic field above the target. The magnetic field constrains electrons to move spirally around the target surface. , a method to increase the probability of electrons colliding with argon, and improve the gas ionization rate and sputtering yield. [0003] Due to its excellent controllability and film bonding force, it is widely used in semiconductor manufacturing processes. Among the many characteristics of the film, the uniformity is an important index to measure the quality of the film and the performance of the machine. The uniformity of the film is related to many factors, including gas uniformity, magnetic field unifo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/54
CPCC23C14/35C23C14/542
Inventor 张汝康孙佳琦王国峰
Owner 北海惠科半导体科技有限公司
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