Single crystal furnace thermal field structure, single crystal furnace and crystal bar

Abstract

The invention provides a single crystal furnace thermal field structure, a single crystal furnace and a crystal bar, and is characterized in that the single crystal furnace comprises a furnace body, wherein a crucible is arranged in the center of the interior of the furnace body; a side heater which is arranged on the periphery of the crucible; and a flow guide assembly which is arranged between the side heater and the crucible and is used for forming a gas flowing channel with the outer wall of the crucible so as to discharge gas out of the furnace body. According to the single crystal furnace thermal field structure provided by the embodiment of the invention, the gas introduced into the single crystal furnace can be guided and discharged out of the furnace through the formed gas flowing channel so that the heater in the furnace is isolated and protected, and silicon monoxide wrapped in the gas is prevented from damaging the heater, therefore, the service life of the heater in the furnace is prolonged, and normal work of the heater is ensured.

Description

technical field [0001] The invention relates to the technical field of crystal rod preparation, in particular to a thermal field structure of a single crystal furnace, a single crystal furnace and a crystal rod. Background technique [0002] During the growth process of single crystal silicon materials, especially in the process of growing single crystal silicon materials through the Czochralski method single crystal furnace, graphite thermal field is usually used to provide growth temperature, gradient control, etc. In the specific process, the polycrystalline raw material is melted in a low vacuum and accompanied by an inert gas environment, and the single crystal material is prepared by contacting the seed crystal and rotating and lifting, and the heat source mainly comes from the graphite heater. However, the splashing of silicon liquid during the secondary feeding, and the silicon monoxide (SiO) escaping from the surface of the silicon liquid at high temperature will re...

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Problems solved by technology

[0003] In view of this, the present invention provides a thermal field structure of a single crystal furnace, a single crystal furnace and an ingot, which can solve the problem of damage to the heater caused by the gas mixed with harmful impurities in the furnace in the prior art, which in turn affects the service life of the heater and even affects Problems with the quality of prepared products

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